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K4M563233G-HN75
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Samsung
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Неклассифицированные
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- Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount：YES
- Number of Terminals：90
- Package Description：FBGA, BGA90,9X15,32
- Package Style：GRID ARRAY, FINE PITCH
- Moisture Sensitivity Levels：1
- Number of Words Code：8000000
- Package Body Material：PLASTIC/EPOXY
- Package Equivalence Code：BGA90,9X15,32
- Operating Temperature-Min：-25 °C
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Access Time-Max：5.4 ns
- Operating Temperature-Max：85 °C
- Rohs Code：Yes
- Manufacturer Part Number：K4M563233G-HN75
- Clock Frequency-Max (fCLK)：133 MHz
- Number of Words：8388608 words
- Package Code：FBGA
- Package Shape：RECTANGULAR
- Manufacturer：Samsung Semiconductor
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：SAMSUNG SEMICONDUCTOR INC
- Risk Rank：5.8
- JESD-609 Code：e3
- Pbfree Code：Yes
- Terminal Finish：MATTE TIN
- Subcategory：DRAMs
- Technology：CMOS
- Terminal Position：BOTTOM
- Terminal Form：BALL
- Peak Reflow Temperature (Cel)：225
- Terminal Pitch：0.8 mm
- Reach Compliance Code：unknown
- JESD-30 Code：R-PBGA-B90
- Qualification Status：Not Qualified
- Power Supplies：3/3.3 V
- Temperature Grade：OTHER
- Supply Current-Max：0.16 mA
- Organization：8MX32
- Memory Width：32
- Standby Current-Max：0.001 A
- Memory Density：268435456 bit
- I/O Type：COMMON
- Memory IC Type：SYNCHRONOUS DRAM
- Refresh Cycles：4096
- Sequential Burst Length：1,2,4,8,FP
- Interleaved Burst Length：1,2,4,8
Со склада 0
Итого $0.00000
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