H5TQ4G63MFR-H9C

Name: Hynix H5TQ4G63MFR-H9C
Brand: Hynix
Rating: 4.9 (17 reviews)

Hynix
Неклассифицированные
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DDR DRAM, 256MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Date Sheet

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Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Surface Mount：YES
Number of Terminals：96
Package Description：TFBGA, BGA96,9X16,32
Package Style：GRID ARRAY, THIN PROFILE, FINE PITCH
Number of Words Code：256000000
Package Body Material：PLASTIC/EPOXY
Package Equivalence Code：BGA96,9X16,32
Reflow Temperature-Max (s)：20
Access Time-Max：0.255 ns
Operating Temperature-Max：85 °C
Rohs Code：Yes
Manufacturer Part Number：H5TQ4G63MFR-H9C
Clock Frequency-Max (fCLK)：667 MHz
Number of Words：268435456 words
Supply Voltage-Nom (Vsup)：1.5 V
Package Code：TFBGA
Package Shape：RECTANGULAR
Manufacturer：SK Hynix Inc
Part Life Cycle Code：Obsolete
Ihs Manufacturer：SK HYNIX INC
Risk Rank：5.62
Part Package Code：BGA
JESD-609 Code：e1
ECCN Code：EAR99
Terminal Finish：Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature：AUTO/SELF REFRESH
HTS Code：8542.32.00.36
Subcategory：DRAMs
Technology：CMOS
Terminal Position：BOTTOM
Terminal Form：BALL
Peak Reflow Temperature (Cel)：260
Number of Functions：1
Terminal Pitch：0.8 mm
Reach Compliance Code：compliant
Pin Count：96
JESD-30 Code：R-PBGA-B96
Qualification Status：Not Qualified
Supply Voltage-Max (Vsup)：1.575 V
Power Supplies：1.5 V
Temperature Grade：OTHER
Supply Voltage-Min (Vsup)：1.425 V
Number of Ports：1
Operating Mode：SYNCHRONOUS
Supply Current-Max：0.285 mA
Organization：256MX16
Output Characteristics：3-STATE
Seated Height-Max：1.2 mm
Memory Width：16
Standby Current-Max：0.02 A
Memory Density：4294967296 bit
I/O Type：COMMON
Memory IC Type：DDR DRAM
Refresh Cycles：8192
Sequential Burst Length：4,8
Interleaved Burst Length：4,8
Access Mode：MULTI BANK PAGE BURST
Self Refresh：YES
Width：9.4 mm
Length：13 mm

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