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K4H510838C-ZCB3
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Samsung
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Неклассифицированные
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- DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60,
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount：YES
- Number of Terminals：60
- Package Style：GRID ARRAY
- Moisture Sensitivity Levels：3
- Number of Words Code：64000000
- Package Body Material：PLASTIC/EPOXY
- Package Equivalence Code：BGA60,9X12,40/32
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Access Time-Max：0.7 ns
- Operating Temperature-Max：70 °C
- Rohs Code：Yes
- Manufacturer Part Number：K4H510838C-ZCB3
- Clock Frequency-Max (fCLK)：166 MHz
- Number of Words：67108864 words
- Supply Voltage-Nom (Vsup)：2.5 V
- Package Code：BGA
- Package Shape：RECTANGULAR
- Manufacturer：Samsung Semiconductor
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：SAMSUNG SEMICONDUCTOR INC
- Risk Rank：5.84
- JESD-609 Code：e1
- Pbfree Code：Yes
- Terminal Finish：Tin/Silver/Copper (Sn/Ag/Cu)
- Subcategory：DRAMs
- Technology：CMOS
- Terminal Position：BOTTOM
- Terminal Form：BALL
- Peak Reflow Temperature (Cel)：260
- Terminal Pitch：0.8 mm
- Reach Compliance Code：unknown
- JESD-30 Code：R-PBGA-B60
- Qualification Status：Not Qualified
- Power Supplies：2.5 V
- Temperature Grade：COMMERCIAL
- Supply Current-Max：0.36 mA
- Organization：64MX8
- Output Characteristics：3-STATE
- Memory Width：8
- Standby Current-Max：0.005 A
- Memory Density：536870912 bit
- I/O Type：COMMON
- Memory IC Type：DDR DRAM
- Refresh Cycles：8192
- Sequential Burst Length：2,4,8
- Interleaved Burst Length：2,4,8
Со склада 0
Итого $0.00000
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