BUZ100S

Name: Infineon BUZ100S
Brand: Infineon
Rating: 4.6 (10 reviews)

Infineon
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-220-3
Power Field-Effect Transistor, 77A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Date Sheet

Lagernummer 2269

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mounting Type：Through Hole
Package / Case：TO-220-3
Surface Mount：NO
Supplier Device Package：PG-TO220-3-1
Number of Terminals：3
Transistor Element Material：SILICON
Continuous Drain Current Id：77
Product Status：Active
Power Dissipation (Max)：170W (Tc)
Mfr：Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：77A (Tc)
Package：Bulk
Part Life Cycle Code：Active
Ihs Manufacturer：ROCHESTER ELECTRONICS LLC
Risk Rank：5.28
Part Package Code：TO-220AB
Drain Current-Max (ID)：77 A
Number of Elements：1
Manufacturer：Rochester Electronics LLC
Package Shape：RECTANGULAR
Manufacturer Part Number：BUZ100S
Rohs Code：No
Reflow Temperature-Max (s)：NOT SPECIFIED
Package Body Material：PLASTIC/EPOXY
Moisture Sensitivity Levels：NOT SPECIFIED
Package Style：FLANGE MOUNT
Package Description：PLASTIC, TO-220, 3 PIN
Series：SIPMOS®
Operating Temperature：-55°C ~ 175°C (TJ)
JESD-609 Code：e0
Pbfree Code：No
Terminal Finish：TIN LEAD
Additional Feature：AVALANCHE RATED
Technology：MOSFET (Metal Oxide)
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：unknown
Pin Count：3
JESD-30 Code：R-PSFM-T3
Qualification Status：COMMERCIAL
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：15mOhm @ 55A, 10V
Vgs(th) (Max) @ Id：4V @ 130µA
Input Capacitance (Ciss) (Max) @ Vds：2375 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
Drain to Source Voltage (Vdss)：55 V
Vgs (Max)：±20V
Polarity/Channel Type：N-CHANNEL
JEDEC-95 Code：TO-220AB
Drain-source On Resistance-Max：0.015 Ω
Pulsed Drain Current-Max (IDM)：308 A
DS Breakdown Voltage-Min：55 V
Channel Type：N
Avalanche Energy Rating (Eas)：380 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-

Со склада 2269

Итого $0.00000