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FDD3706-NL
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Fairchild Semiconductor
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Неклассифицированные
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- Power Field-Effect Transistor, 14.7A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount：YES
- Number of Terminals：2
- Transistor Element Material：SILICON
- Package Description：DPAK-3
- Package Style：SMALL OUTLINE
- Package Body Material：PLASTIC/EPOXY
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：175 °C
- Rohs Code：Yes
- Manufacturer Part Number：FDD3706_NL
- Package Shape：RECTANGULAR
- Manufacturer：Fairchild Semiconductor Corporation
- Number of Elements：1
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：FAIRCHILD SEMICONDUCTOR CORP
- Risk Rank：5.37
- Part Package Code：TO-252
- Drain Current-Max (ID)：14.7 A
- JESD-609 Code：e3
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn)
- Subcategory：FET General Purpose Power
- Terminal Position：SINGLE
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：not_compliant
- Pin Count：3
- JESD-30 Code：R-PSSO-G2
- Qualification Status：Not Qualified
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- Case Connection：DRAIN
- Transistor Application：SWITCHING
- Polarity/Channel Type：N-CHANNEL
- JEDEC-95 Code：TO-252
- Drain Current-Max (Abs) (ID)：14.7 A
- Drain-source On Resistance-Max：0.009 Ω
- Pulsed Drain Current-Max (IDM)：60 A
- DS Breakdown Voltage-Min：20 V
- Avalanche Energy Rating (Eas)：60 mJ
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)：44 W
Со склада 0
Итого $0.00000
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