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H5DU5162ETR-E3C
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Hynix
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Неклассифицированные
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- DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount：YES
- Number of Terminals：60
- Package Description：VBGA, TSSOP66,.46
- Package Style：GRID ARRAY, VERY THIN PROFILE
- Number of Words Code：32000000
- Package Body Material：PLASTIC/EPOXY
- Package Equivalence Code：TSSOP66,.46
- Reflow Temperature-Max (s)：20
- Access Time-Max：0.7 ns
- Operating Temperature-Max：70 °C
- Rohs Code：Yes
- Manufacturer Part Number：H5DU5162ETR-E3C
- Clock Frequency-Max (fCLK)：200 MHz
- Number of Words：33554432 words
- Supply Voltage-Nom (Vsup)：2.5 V
- Package Code：VBGA
- Package Shape：RECTANGULAR
- Manufacturer：SK Hynix Inc
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：SK HYNIX INC
- Risk Rank：5.64
- Part Package Code：BGA
- JESD-609 Code：e6
- ECCN Code：EAR99
- Terminal Finish：Tin/Bismuth (Sn98Bi2)
- Additional Feature：AUTO/SELF REFRESH
- HTS Code：8542.32.00.28
- Subcategory：DRAMs
- Technology：CMOS
- Terminal Position：BOTTOM
- Terminal Form：BALL
- Peak Reflow Temperature (Cel)：260
- Number of Functions：1
- Terminal Pitch：1 mm
- Reach Compliance Code：unknown
- Pin Count：60
- JESD-30 Code：R-PBGA-B60
- Qualification Status：Not Qualified
- Supply Voltage-Max (Vsup)：2.7 V
- Power Supplies：2.6 V
- Temperature Grade：COMMERCIAL
- Supply Voltage-Min (Vsup)：2.3 V
- Number of Ports：1
- Operating Mode：SYNCHRONOUS
- Supply Current-Max：0.26 mA
- Organization：32MX16
- Output Characteristics：3-STATE
- Seated Height-Max：1 mm
- Memory Width：16
- Standby Current-Max：0.005 A
- Memory Density：536870912 bit
- I/O Type：COMMON
- Memory IC Type：DDR DRAM
- Refresh Cycles：8192
- Sequential Burst Length：2,4,8
- Interleaved Burst Length：2,4,8
- Access Mode：FOUR BANK PAGE BURST
- Self Refresh：YES
- Width：8 mm
- Length：12 mm
Со склада 0
Итого $0.00000
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