IRF3704S

Name: International Rectifier IRF3704S
Brand: International Rectifier
Rating: 5 (5 reviews)

International Rectifier
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
-
Power Field-Effect Transistor, 75A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Date Sheet

Lagernummer 3790

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mount：Surface Mount
Surface Mount：YES
Number of Pins：3
Number of Terminals：2
Transistor Element Material：SILICON
Number of Elements：1
Voltage Rating (DC)：20 V
RoHS：Compliant
Package Description：SMALL OUTLINE, R-PSSO-G2
Package Style：SMALL OUTLINE
Moisture Sensitivity Levels：1
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：30
Operating Temperature-Max：175 °C
Rohs Code：No
Manufacturer Part Number：IRF3704S
Package Shape：RECTANGULAR
Manufacturer：International Rectifier
Part Life Cycle Code：Obsolete
Ihs Manufacturer：INTERNATIONAL RECTIFIER CORP
Risk Rank：8.6
Drain Current-Max (ID)：75 A
Packaging：Bulk
JESD-609 Code：e0
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
Max Operating Temperature：175 °C
Min Operating Temperature：-55 °C
Subcategory：FET General Purpose Power
Terminal Position：SINGLE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：225
Reach Compliance Code：compliant
Current Rating：77 A
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：87 W
Case Connection：DRAIN
Transistor Application：SWITCHING
Drain to Source Voltage (Vdss)：20 V
Polarity/Channel Type：N-CHANNEL
Continuous Drain Current (ID)：77 A
Gate to Source Voltage (Vgs)：20 V
Drain Current-Max (Abs) (ID)：77 A
Drain-source On Resistance-Max：0.009 Ω
Drain to Source Breakdown Voltage：20 V
Pulsed Drain Current-Max (IDM)：308 A
DS Breakdown Voltage-Min：20 V
Avalanche Energy Rating (Eas)：216 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)：87 W
Lead Free：Contains Lead

Со склада 3790

Итого $0.00000