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BFP182WE6327
- Infineon
- Дискретные полупроводниковые
- SC-82A, SOT-343
- RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
- Date Sheet
Lagernummer 18047
- 1+: $0.11609
- 10+: $0.10952
- 100+: $0.10332
- 500+: $0.09747
- 1000+: $0.09195
Zwischensummenbetrag $0.11609
Спецификация Часто задаваемые вопросы
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SC-82A, SOT-343
- Surface Mount:YES
- Number of Pins:4
- Supplier Device Package:PG-SOT343-4
- Number of Terminals:4
- Transistor Element Material:SILICON
- RoHS:Compliant
- Voltage Rating (DC):12 V
- Collector-Emitter Breakdown Voltage:12 V
- Package:Bulk
- Current-Collector (Ic) (Max):35mA
- Mfr:Infineon Technologies
- Product Status:Active
- Package Style:SMALL OUTLINE
- Moisture Sensitivity Levels:NOT SPECIFIED
- Package Body Material:PLASTIC/EPOXY
- Reflow Temperature-Max (s):40
- Rohs Code:Yes
- Transition Frequency-Nom (fT):8000 MHz
- Manufacturer Part Number:BFP182WE6327
- Package Shape:RECTANGULAR
- Manufacturer:Rochester Electronics LLC
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:ROCHESTER ELECTRONICS LLC
- Risk Rank:5.64
- Operating Temperature:150°C (TJ)
- Series:-
- JESD-609 Code:e3
- Pbfree Code:Yes
- Terminal Finish:MATTE TIN
- Max Operating Temperature:150 °C
- Min Operating Temperature:-65 °C
- Max Power Dissipation:250 mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Reach Compliance Code:unknown
- Current Rating:35 mA
- Frequency:8 GHz
- JESD-30 Code:R-PDSO-G4
- Qualification Status:COMMERCIAL
- Polarity:NPN
- Configuration:SINGLE
- Power Dissipation:250 mW
- Case Connection:COLLECTOR
- Power - Max:250mW
- Transistor Application:AMPLIFIER
- Gain Bandwidth Product:8 GHz
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):12 V
- Max Collector Current:35 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 8V
- Gain:22 dB
- Voltage - Collector Emitter Breakdown (Max):12V
- Max Frequency:8 GHz
- Transition Frequency:8 GHz
- Max Breakdown Voltage:12 V
- Frequency - Transition:8GHz
- Emitter Base Voltage (VEBO):2 V
- Collector Current-Max (IC):0.035 A
- Continuous Collector Current:35 mA
- Collector-Emitter Voltage-Max:12 V
- Highest Frequency Band:ULTRA HIGH FREQUENCY BAND
- Collector-Base Capacitance-Max:0.45 pF
- Noise Figure (dB Typ @ f):0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
- Lead Free:Lead Free
Со склада 18047
- 1+: $0.11609
- 10+: $0.10952
- 100+: $0.10332
- 500+: $0.09747
- 1000+: $0.09195
Итого $0.11609