2SA1313-Y(T5L,F,T)

Name: Toshiba 2SA1313-Y(T5L,F,T)
Brand: Toshiba
Rating: 4.7 (10 reviews)

Toshiba
Дискретные полупроводниковые
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TRANSISTOR,BJT,PNP,50V V(BR)CEO,500MA I(C),SOT-23
Date Sheet

Lagernummer 0

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mount：Surface Mount
Surface Mount：YES
Number of Pins：3
Number of Terminals：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：50 V
hFEMin：25
Number of Elements：1
RoHS：Compliant
Package Description：SMALL OUTLINE, R-PDSO-G3
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Operating Temperature-Max：150 °C
Rohs Code：No
Transition Frequency-Nom (fT)：200 MHz
Manufacturer Part Number：2SA1313-Y(T5LFT)
Package Shape：RECTANGULAR
Manufacturer：Toshiba America Electronic Components
Part Life Cycle Code：Active
Ihs Manufacturer：TOSHIBA CORP
Risk Rank：5.87
Packaging：Tape & Reel (TR)
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Subcategory：Other Transistors
Max Power Dissipation：200 mW
Terminal Position：DUAL
Terminal Form：GULL WING
Reach Compliance Code：unknown
Frequency：200 MHz
JESD-30 Code：R-PDSO-G3
Polarity：PNP
Configuration：SINGLE
Element Configuration：Single
Power Dissipation：200 mW
Transistor Application：SWITCHING
Gain Bandwidth Product：200 MHz
Polarity/Channel Type：PNP
Collector Emitter Voltage (VCEO)：50 V
Max Collector Current：500 mA
JEDEC-95 Code：TO-236
Transition Frequency：200 MHz
Max Breakdown Voltage：50 V
Collector Base Voltage (VCBO)：50 V
Power Dissipation-Max (Abs)：0.2 W
Emitter Base Voltage (VEBO)：-5 V
Collector Current-Max (IC)：0.5 A
DC Current Gain-Min (hFE)：120
Collector-Emitter Voltage-Max：50 V
VCEsat-Max：0.25 V
Power Dissipation Ambient-Max：0.2 W
Radiation Hardening：No

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