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BFG135AE6327
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Infineon
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Дискретные полупроводниковые
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- RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Mount：Surface Mount
- Surface Mount：YES
- Number of Pins：4
- Number of Terminals：4
- Transistor Element Material：SILICON
- hFEMin：80
- Number of Elements：1
- RoHS：Compliant
- Collector-Emitter Breakdown Voltage：15 V
- Package Description：SMALL OUTLINE, R-PDSO-G4
- Package Style：SMALL OUTLINE
- Package Body Material：PLASTIC/EPOXY
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：150 °C
- Rohs Code：Yes
- Transition Frequency-Nom (fT)：6000 MHz
- Manufacturer Part Number：BFG135AE6327
- Package Shape：RECTANGULAR
- Manufacturer：Infineon Technologies AG
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：INFINEON TECHNOLOGIES AG
- Risk Rank：5.36
- Packaging：Tape and Reel
- ECCN Code：EAR99
- Max Operating Temperature：150 °C
- Min Operating Temperature：-65 °C
- Subcategory：Other Transistors
- Max Power Dissipation：1 W
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：compliant
- Frequency：6 GHz
- JESD-30 Code：R-PDSO-G4
- Qualification Status：Not Qualified
- Polarity：NPN
- Configuration：SINGLE
- Element Configuration：Single
- Power Dissipation：1 W
- Case Connection：COLLECTOR
- Transistor Application：AMPLIFIER
- Gain Bandwidth Product：6 GHz
- Polarity/Channel Type：NPN
- Collector Emitter Voltage (VCEO)：15 V
- Max Collector Current：150 mA
- Gain：14 dB
- Transition Frequency：6 GHz
- Collector Base Voltage (VCBO)：25 V
- Power Dissipation-Max (Abs)：1 W
- Emitter Base Voltage (VEBO)：2 V
- Collector Current-Max (IC)：0.15 A
- DC Current Gain-Min (hFE)：80
- Collector-Emitter Voltage-Max：15 V
- Highest Frequency Band：L BAND
- Collector-Base Capacitance-Max：1.8 pF
Со склада 0
Итого $0.00000
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