Изображение служит лишь для справки
GT50J121
-
Toshiba
-
Дискретные полупроводниковые
- -
- TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-21F2C-3, Insulated Gate BIP Transistor
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Mount：Through Hole
- Surface Mount：NO
- Number of Pins：3
- Number of Terminals：3
- Transistor Element Material：SILICON
- RoHS：Compliant
- Package Description：FLANGE MOUNT, R-PSFM-T3
- Package Style：FLANGE MOUNT
- Package Body Material：PLASTIC/EPOXY
- Turn-on Time-Nom (ton)：240 ns
- Turn-off Time-Nom (toff)：430 ns
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：150 °C
- Rohs Code：No
- Manufacturer Part Number：GT50J121
- Package Shape：RECTANGULAR
- Manufacturer：Toshiba America Electronic Components
- Number of Elements：1
- Part Life Cycle Code：End Of Life
- Ihs Manufacturer：TOSHIBA CORP
- Risk Rank：5.26
- Pbfree Code：No
- Additional Feature：HIGH SPEED
- Subcategory：Insulated Gate BIP Transistors
- Terminal Position：SINGLE
- Terminal Form：THROUGH-HOLE
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：unknown
- Pin Count：3
- JESD-30 Code：R-PSFM-T3
- Qualification Status：Not Qualified
- Configuration：SINGLE WITH BUILT-IN DIODE
- Element Configuration：Single
- Case Connection：COLLECTOR
- Transistor Application：POWER CONTROL
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：600 V
- Max Collector Current：50 A
- Power Dissipation-Max (Abs)：240 W
- Collector Current-Max (IC)：50 A
- Collector-Emitter Voltage-Max：600 V
- Gate-Emitter Voltage-Max：20 V
- Radiation Hardening：No
Со склада 0
Итого $0.00000
Центр поддержки
услуга покупки
пункты договора
Корпорация Whisyee
Контакты