BS250PSTOA

Name: Diodes Inc. BS250PSTOA
Brand: Diodes Inc.
Rating: 4.5 (14 reviews)

Diodes Inc.
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
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Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3
Date Sheet

Lagernummer 0

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mount：Through Hole
Surface Mount：NO
Weight：453.59237 mg
Number of Terminals：3
Transistor Element Material：SILICON
Voltage Rating (DC)：-45 V
RoHS：Compliant
Package Description：IN-LINE, R-PSIP-W3
Package Style：IN-LINE
Moisture Sensitivity Levels：1
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：40
Operating Temperature-Max：200 °C
Rohs Code：Yes
Manufacturer Part Number：BS250PSTOA
Package Shape：RECTANGULAR
Manufacturer：Zetex / Diodes Inc
Number of Elements：1
Part Life Cycle Code：Transferred
Ihs Manufacturer：ZETEX PLC
Risk Rank：5.04
Drain Current-Max (ID)：0.23 A
Packaging：Bulk
JESD-609 Code：e3
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn)
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
HTS Code：8541.29.00.95
Max Power Dissipation：700 mW
Terminal Position：SINGLE
Terminal Form：WIRE
Peak Reflow Temperature (Cel)：260
Reach Compliance Code：not_compliant
Current Rating：-230 mA
JESD-30 Code：R-PSIP-W3
Qualification Status：Not Qualified
Configuration：SINGLE
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：700 mW
Transistor Application：SWITCHING
Drain to Source Voltage (Vdss)：45 V
Polarity/Channel Type：P-CHANNEL
Continuous Drain Current (ID)：230 mA
Gate to Source Voltage (Vgs)：20 V
Drain-source On Resistance-Max：14 Ω
Input Capacitance：60 pF
DS Breakdown Voltage-Min：45 V
FET Technology：METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance：14 Ω
Rds On Max：14 Ω
Width：2.41 mm
Height：4.01 mm
Length：4.77 mm
REACH SVHC：No SVHC
Lead Free：Lead Free

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