Изображение служит лишь для справки
BC846BWH6327XT
- Infineon
- Дискретные полупроводниковые
- -
- Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Mount:Surface Mount
- Surface Mount:YES
- Number of Pins:3
- Number of Terminals:3
- Transistor Element Material:SILICON
- RoHS:Compliant
- Package Description:SMALL OUTLINE, R-PDSO-G3
- Package Style:SMALL OUTLINE
- Package Body Material:PLASTIC/EPOXY
- Reflow Temperature-Max (s):NOT SPECIFIED
- Rohs Code:Yes
- Transition Frequency-Nom (fT):250 MHz
- Manufacturer Part Number:BC846BWH6327XT
- Package Shape:RECTANGULAR
- Manufacturer:Infineon Technologies AG
- Number of Elements:1
- Part Life Cycle Code:Obsolete
- Ihs Manufacturer:INFINEON TECHNOLOGIES AG
- Risk Rank:5.55
- Max Operating Temperature:150 °C
- Min Operating Temperature:-65 °C
- Additional Feature:LOW NOISE
- Max Power Dissipation:250 mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:compliant
- JESD-30 Code:R-PDSO-G3
- Configuration:SINGLE
- Transistor Application:AMPLIFIER
- Polarity/Channel Type:NPN
- Collector Emitter Voltage (VCEO):65 V
- Max Collector Current:100 mA
- Collector Base Voltage (VCBO):80 V
- Collector Current-Max (IC):0.1 A
- DC Current Gain-Min (hFE):200
- Collector-Emitter Voltage-Max:65 V
Со склада 0
Итого $0.00000