BUJ303B,127

Name: NXP USA Inc. BUJ303B,127
Brand: NXP USA Inc.
Rating: 4.8 (16 reviews)

Lagernummer 3332

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Factory Lead Time：8 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Surface Mount：NO
Number of Pins：3
Supplier Device Package：TO-220AB
Number of Terminals：3
Transistor Element Material：SILICON
Transistor Polarity：NPN
Collector-Emitter Breakdown Voltage：400 V
hFEMin：10
Number of Elements：1
RoHS：Compliant
Package：Bulk
Current-Collector (Ic) (Max)：5 A
Mfr：NXP USA Inc.
Product Status：Active
Package Description：PLASTIC PACKAGE-3
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Rohs Code：Yes
Manufacturer Part Number：BUJ303B,127
Package Shape：RECTANGULAR
Manufacturer：WeEn Semiconductor Co Ltd
Part Life Cycle Code：Active
Ihs Manufacturer：WEEN SEMICONDUCTORS CO LTD
Risk Rank：1.06
Operating Temperature：150°C (TJ)
Series：-
JESD-609 Code：e3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Max Operating Temperature：150 °C
Min Operating Temperature：-65 °C
Max Power Dissipation：100 W
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Reach Compliance Code：compliant
Reference Standard：IEC-134
JESD-30 Code：R-PSFM-T3
Polarity：NPN
Configuration：SINGLE
Element Configuration：Single
Power Dissipation：100
Case Connection：COLLECTOR
Power - Max：100 W
Transistor Application：SWITCHING
Polarity/Channel Type：NPN
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：400 V
Max Collector Current：5 A
DC Current Gain (hFE) (Min) @ Ic, Vce：23 @ 800mA, 3V
Current - Collector Cutoff (Max)：100µA
JEDEC-95 Code：TO-220AB
Vce Saturation (Max) @ Ib, Ic：1.5V @ 1A, 3A
Voltage - Collector Emitter Breakdown (Max)：400 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：1.05 kV
Emitter Base Voltage (VEBO)：1.05 kV
Collector Current-Max (IC)：5 A
DC Current Gain-Min (hFE)：23
Continuous Collector Current：5
Collector-Emitter Voltage-Max：400 V
Radiation Hardening：No

Со склада 3332

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