Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Массивы NTP165N65S3H
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NTP165N65S3H
- onsemi
- Транзисторы - Полевые (FET), МОП-транзисторы - Массивы
- TO-220-3
- 650V 19A 142W 132mΩ@10V,9.5A 4V@1.6mA N Channel 1.808nF@400V 35nC@10V -55℃~+150℃@(Tj) TO-220-3 MOSFETs ROHS
- Date Sheet
Lagernummer 659
- 1+: $1.39971
- 10+: $1.32048
- 100+: $1.24573
- 500+: $1.17522
- 1000+: $1.10870
Zwischensummenbetrag $1.39971
Спецификация Часто задаваемые вопросы
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Supplier Device Package:TO-220-3
- Number of Elements per Chip:1
- Package Type:TO-220
- Channel Mode:Enhancement
- Qualification:-
- Continuous Drain Current Id:19A
- Vds - Drain-Source Breakdown Voltage:650 V
- Vgs th - Gate-Source Threshold Voltage:4 V
- Pd - Power Dissipation:142 W
- Transistor Polarity:N-Channel
- Maximum Operating Temperature:+ 150 C
- Vgs - Gate-Source Voltage:- 30 V, + 30 V
- Minimum Operating Temperature:- 55 C
- Factory Pack QuantityFactory Pack Quantity:50
- Mounting Styles:Through Hole
- Manufacturer:onsemi
- Brand:onsemi
- Qg - Gate Charge:35 nC
- Rds On - Drain-Source Resistance:165 mOhms
- RoHS:Details
- Id - Continuous Drain Current:19 A
- Package:Tube
- Current - Continuous Drain (Id) @ 25℃:19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Mfr:onsemi
- Power Dissipation (Max):142W (Tc)
- Product Status:Active
- Series:NTP165N65S
- Packaging:Tube
- Operating Temperature:-55°C ~ 150°C (TJ)
- Subcategory:MOSFETs
- Technology:Si
- Pin Count:3
- Number of Channels:1 Channel
- Power Dissipation:142W
- FET Type:N-Channel
- Rds On (Max) @ Id, Vgs:165mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 1.6mA
- Input Capacitance (Ciss) (Max) @ Vds:1808 pF @ 400 V
- Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
- Drain to Source Voltage (Vdss):650 V
- Vgs (Max):±30V
- Product Type:MOSFET
- Channel Type:N
- FET Feature:-
- Product Category:MOSFET
Со склада 659
- 1+: $1.39971
- 10+: $1.32048
- 100+: $1.24573
- 500+: $1.17522
- 1000+: $1.10870
Итого $1.39971