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NTP165N65S3H

Lagernummer 659

  • 1+: $1.39971
  • 10+: $1.32048
  • 100+: $1.24573
  • 500+: $1.17522
  • 1000+: $1.10870

Zwischensummenbetrag $1.39971

Спецификация Часто задаваемые вопросы
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Number of Elements per Chip:1
  • Package Type:TO-220
  • Channel Mode:Enhancement
  • Qualification:-
  • Continuous Drain Current Id:19A
  • Vds - Drain-Source Breakdown Voltage:650 V
  • Vgs th - Gate-Source Threshold Voltage:4 V
  • Pd - Power Dissipation:142 W
  • Transistor Polarity:N-Channel
  • Maximum Operating Temperature:+ 150 C
  • Vgs - Gate-Source Voltage:- 30 V, + 30 V
  • Minimum Operating Temperature:- 55 C
  • Factory Pack QuantityFactory Pack Quantity:50
  • Mounting Styles:Through Hole
  • Manufacturer:onsemi
  • Brand:onsemi
  • Qg - Gate Charge:35 nC
  • Rds On - Drain-Source Resistance:165 mOhms
  • RoHS:Details
  • Id - Continuous Drain Current:19 A
  • Package:Tube
  • Current - Continuous Drain (Id) @ 25℃:19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Mfr:onsemi
  • Power Dissipation (Max):142W (Tc)
  • Product Status:Active
  • Series:NTP165N65S
  • Packaging:Tube
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Subcategory:MOSFETs
  • Technology:Si
  • Pin Count:3
  • Number of Channels:1 Channel
  • Power Dissipation:142W
  • FET Type:N-Channel
  • Rds On (Max) @ Id, Vgs:165mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1.6mA
  • Input Capacitance (Ciss) (Max) @ Vds:1808 pF @ 400 V
  • Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
  • Drain to Source Voltage (Vdss):650 V
  • Vgs (Max):±30V
  • Product Type:MOSFET
  • Channel Type:N
  • FET Feature:-
  • Product Category:MOSFET

Со склада 659

  • 1+: $1.39971
  • 10+: $1.32048
  • 100+: $1.24573
  • 500+: $1.17522
  • 1000+: $1.10870

Итого $1.39971