BSS139IXTSA1

Name: Infineon Technologies BSS139IXTSA1
Brand: Infineon Technologies
Price: 0.3241026 USD
Availability: InStock
Rating: 4.6 (10 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Массивы
SOT-23-3
S0T23-3 MOSFETs ROHS
Date Sheet

Lagernummer 4250

1+： $0.32410
10+： $0.30576
100+： $0.28845
500+： $0.27212
1000+： $0.25672

Zwischensummenbetrag $0.32410

Спецификация Часто задаваемые вопросы

Mounting Type：Surface Mount
Package / Case：SOT-23-3
Supplier Device Package：PG-SOT-23-3
Continuous Drain Current Id：100
Number of Elements per Chip：1
Package Type：SOT-23
Channel Mode：Depletion
MSL：MSL 1 - Unlimited
Qualification：-
Vds - Drain-Source Breakdown Voltage：250 V
Vgs th - Gate-Source Threshold Voltage：2.1 V
Pd - Power Dissipation：360 mW
Transistor Polarity：N-Channel
Maximum Operating Temperature：+ 150 C
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：3000
Mounting Styles：SMD/SMT
Part # Aliases：BSS139I SP005558631
Manufacturer：Infineon
Brand：Infineon Technologies
Qg - Gate Charge：2.3 nC
Rds On - Drain-Source Resistance：30 Ohms
RoHS：Details
Id - Continuous Drain Current：100 mA
Package：Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃：100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Mfr：Infineon Technologies
Power Dissipation (Max)：360mW (Ta)
Product Status：Active
Series：BSS139I
Packaging：Cut Tape
Operating Temperature：-55°C ~ 150°C (TJ)
Subcategory：MOSFETs
Technology：Si
Pin Count：3
Number of Channels：1 Channel
Power Dissipation：360
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id：1V @ 56µA
Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 5 V
Drain to Source Voltage (Vdss)：250 V
Vgs (Max)：±20V
Product Type：MOSFET
Channel Type：N
FET Feature：-
Product Category：MOSFET

Со склада 4250

1+： $0.32410
10+： $0.30576
100+： $0.28845
500+： $0.27212
1000+： $0.25672

Итого $0.32410