RSS070N05HZGTB

Name: ROHM Semicon RSS070N05HZGTB
Brand: ROHM Semicon
Price: 2.2157361 USD
Availability: InStock
Rating: 4.6 (8 reviews)

ROHM Semicon
Транзисторы - Полевые (FET), МОП-транзисторы - Массивы
SOP-8
SOP8 MOSFETs ROHS
Date Sheet

Lagernummer 2176

1+： $2.21574
10+： $2.09032
100+： $1.97200
500+： $1.86037
1000+： $1.75507

Zwischensummenbetrag $2.21574

Спецификация Часто задаваемые вопросы

Package / Case：SOP-8
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
MSL：MSL 1 - Unlimited
Qualification：AEC-Q101
Continuous Drain Current Id：7A
Vds - Drain-Source Breakdown Voltage：45 V
Typical Turn-On Delay Time：16 ns
Vgs th - Gate-Source Threshold Voltage：2.5 V
Pd - Power Dissipation：2 W
Transistor Polarity：N-Channel
Maximum Operating Temperature：+ 150 C
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：2500
Mounting Styles：SMD/SMT
Channel Mode：Enhancement
Manufacturer：ROHM Semiconductor
Brand：ROHM Semiconductor
Qg - Gate Charge：12 nC
Rds On - Drain-Source Resistance：25 mOhms
RoHS：Details
Typical Turn-Off Delay Time：57 ns
Id - Continuous Drain Current：7 A
Package：Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃：7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Mfr：Rohm Semiconductor
Power Dissipation (Max)：1.4W (Ta)
Product Status：Active
Packaging：MouseReel
Operating Temperature：150°C (TJ)
Series：-
Subcategory：MOSFETs
Technology：Si
Configuration：Single
Number of Channels：1 Channel
Power Dissipation：2W
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs：16.8 nC @ 5 V
Rise Time：27 ns
Drain to Source Voltage (Vdss)：45 V
Vgs (Max)：±20V
Product Type：MOSFET
Channel Type：N Channel
FET Feature：-
Product Category：MOSFET

Со склада 2176

1+： $2.21574
10+： $2.09032
100+： $1.97200
500+： $1.86037
1000+： $1.75507

Итого $2.21574