2N7002KDW_R1_00001

Name: PANJIT International 2N7002KDW_R1_00001
Brand: PANJIT International
Price: 0.1704411 USD
Availability: InStock
Rating: 5 (13 reviews)

PANJIT International
Транзисторы - Полевые (FET), МОП-транзисторы - Массивы
SOT-363-6
60V 115mA 200mW 3Ω@10V,500mA 2.5V@250uA N Channel SC-70-6(SOT-363) MOSFETs ROHS
Date Sheet

Lagernummer 24714

1+： $0.17044
10+： $0.16079
100+： $0.15169
500+： $0.14311
1000+： $0.13501

Zwischensummenbetrag $0.17044

Спецификация Часто задаваемые вопросы

Package / Case：SOT-363-6
Mounting Type：Surface Mount
Surface Mount：YES
Supplier Device Package：SOT-363
Number of Terminals：6
Transistor Element Material：SILICON
Vds - Drain-Source Breakdown Voltage：60 V
Typical Turn-On Delay Time：20 ns
Vgs th - Gate-Source Threshold Voltage：2.5 V
Pd - Power Dissipation：200 mW
Transistor Polarity：N-Channel
Maximum Operating Temperature：+ 150 C
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Unit Weight：0.000265 oz
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：3000
Mounting Styles：SMD/SMT
Forward Transconductance - Min：100 mS
Channel Mode：Enhancement
Manufacturer：Panjit
Brand：Panjit
Qg - Gate Charge：800 pC
Rds On - Drain-Source Resistance：3 Ohms
RoHS：Details
Typical Turn-Off Delay Time：40 ns
Id - Continuous Drain Current：115 mA
Package：Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃：115mA (Ta)
Mfr：Panjit International Inc.
Product Status：Active
Package Description：SMALL OUTLINE, R-PDSO-G6
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：Yes
Manufacturer Part Number：2N7002KDW_R1_00001
Package Shape：RECTANGULAR
Number of Elements：2
Part Life Cycle Code：Active
Ihs Manufacturer：PAN JIT INTERNATIONAL INC
Risk Rank：5.53
Drain Current-Max (ID)：0.115 A
Series：NFET-035TS
Packaging：MouseReel
Operating Temperature：-55°C ~ 150°C (TJ)
Additional Feature：ULTRA LOW RESISTANCE
Subcategory：MOSFETs
Technology：Si
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
JESD-30 Code：R-PDSO-G6
Configuration：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Channels：2 Channel
Operating Mode：ENHANCEMENT MODE
Power - Max：200mW (Ta)
FET Type：2 N-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds：35pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
Drain to Source Voltage (Vdss)：60V
Polarity/Channel Type：N-CHANNEL
Product Type：MOSFET
Transistor Type：1 N-Channel
Drain-source On Resistance-Max：3 Ω
DS Breakdown Voltage-Min：60 V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Standard
Feedback Cap-Max (Crss)：5 pF
Product Category：MOSFET

Со склада 24714

1+： $0.17044
10+： $0.16079
100+： $0.15169
500+： $0.14311
1000+： $0.13501

Итого $0.17044