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Спецификация Часто задаваемые вопросы
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Surface Mount:YES
  • Supplier Device Package:SOT-23
  • Number of Terminals:3
  • Transistor Element Material:SILICON
  • Mfr:Rectron USA
  • Package:Tape & Reel (TR)
  • Product Status:Active
  • Current-Collector (Ic) (Max):600 mA
  • Emitter- Base Voltage VEBO:5 V
  • Pd - Power Dissipation:250 mW
  • Transistor Polarity:PNP
  • Maximum Operating Temperature:+ 150 C
  • Unit Weight:0.000282 oz
  • Factory Pack QuantityFactory Pack Quantity:3000
  • Mounting Styles:SMD/SMT
  • Gain Bandwidth Product fT:200 MHz
  • Part # Aliases:CMBT2907A
  • Manufacturer:Rectron
  • Brand:Rectron
  • Maximum DC Collector Current:600 mA
  • DC Current Gain hFE Max:300
  • RoHS:Details
  • Collector- Emitter Voltage VCEO Max:60 V
  • Package Description:SMD, 3 PIN
  • Package Style:SMALL OUTLINE
  • Package Body Material:PLASTIC/EPOXY
  • Reflow Temperature-Max (s):NOT SPECIFIED
  • Operating Temperature-Max:150 °C
  • Rohs Code:Yes
  • Transition Frequency-Nom (fT):200 MHz
  • Manufacturer Part Number:CMBT2907A-T
  • Turn-on Time-Max (ton):45 ns
  • Package Shape:RECTANGULAR
  • Number of Elements:1
  • Part Life Cycle Code:Active
  • Ihs Manufacturer:RECTRON LTD
  • Turn-off Time-Max (toff):100 ns
  • Risk Rank:5.17
  • Series:-
  • Operating Temperature:150°C (TJ)
  • Packaging:Reel
  • JESD-609 Code:e3
  • Pbfree Code:Yes
  • ECCN Code:EAR99
  • Terminal Finish:Matte Tin (Sn)
  • HTS Code:8541.21.00.75
  • Subcategory:Transistors
  • Technology:Si
  • Terminal Position:DUAL
  • Terminal Form:GULL WING
  • Peak Reflow Temperature (Cel):265
  • Reach Compliance Code:compliant
  • Pin Count:3
  • JESD-30 Code:R-PDSO-G3
  • Qualification Status:Not Qualified
  • Configuration:Single
  • Power - Max:250 mW
  • Polarity/Channel Type:PNP
  • Product Type:BJTs - Bipolar Transistors
  • Transistor Type:PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 10V
  • Current - Collector Cutoff (Max):50nA
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Frequency - Transition:200MHz
  • Collector Base Voltage (VCBO):60 V
  • Collector Current-Max (IC):0.6 A
  • DC Current Gain-Min (hFE):50
  • Continuous Collector Current:0.6 A
  • Collector-Emitter Voltage-Max:60 V
  • Product Category:Bipolar Transistors - BJT
  • Width:1.4 mm
  • Height:1.15 mm
  • Length:3 mm

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