IPP120P04P4L03AKSA2

Name: Infineon Technologies IPP120P04P4L03AKSA2
Brand: Infineon Technologies
Price: 2.800966 USD
Availability: InStock
Rating: 4.6 (9 reviews)

Infineon Technologies
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-220-3
MOSFET_(20V,40V)
Date Sheet

Lagernummer 1711

1+： $2.80097
10+： $2.64242
100+： $2.49285
500+： $2.35175
1000+： $2.21863

Zwischensummenbetrag $2.80097

Спецификация Часто задаваемые вопросы

Package / Case：TO-220-3
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3-1
Power Dissipation (Max)：136W (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Current - Continuous Drain (Id) @ 25℃：120A (Tc)
Product Status：Active
Package：Bulk
Mfr：Infineon Technologies
Number of Elements per Chip：1
Package Type：TO-220
Channel Mode：Enhancement
Qualification：AEC-Q101
Continuous Drain Current Id：120A
Vds - Drain-Source Breakdown Voltage：40 V
Vgs th - Gate-Source Threshold Voltage：1.7 V
Pd - Power Dissipation：136 W
Transistor Polarity：P-Channel
Maximum Operating Temperature：+ 175 C
Vgs - Gate-Source Voltage：- 16 V, + 5 V
Unit Weight：0.068784 oz
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：500
Mounting Styles：Through Hole
Part # Aliases：IPP120P04P4L-03 SP002581210
Manufacturer：Infineon
Brand：Infineon Technologies
Qg - Gate Charge：180 nC
Rds On - Drain-Source Resistance：3.1 mOhms
RoHS：Details
Id - Continuous Drain Current：120 A
Base Product Number：IPP120
Operating Temperature：-55°C ~ 175°C (TJ)
Packaging：Tube
Subcategory：MOSFETs
Pin Count：3
Number of Channels：1 Channel
Power Dissipation：136W
FET Type：P-Channel
Rds On (Max) @ Id, Vgs：3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：2.2V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds：15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：234 nC @ 10 V
Drain to Source Voltage (Vdss)：40 V
Vgs (Max)：+5V, -16V
Product Type：MOSFET
Channel Type：P
FET Feature：-
Product Category：MOSFET

Со склада 1711

1+： $2.80097
10+： $2.64242
100+： $2.49285
500+： $2.35175
1000+： $2.21863

Итого $2.80097