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HUF76409D3

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Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Surface Mount:NO
  • Supplier Device Package:I-PAK
  • Number of Terminals:3
  • Transistor Element Material:SILICON
  • Package:Bulk
  • Current - Continuous Drain (Id) @ 25℃:18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Mfr:Fairchild Semiconductor
  • Power Dissipation (Max):49W (Tc)
  • Product Status:Active
  • Package Style:IN-LINE
  • Moisture Sensitivity Levels:NOT SPECIFIED
  • Package Body Material:PLASTIC/EPOXY
  • Reflow Temperature-Max (s):NOT SPECIFIED
  • Rohs Code:No
  • Manufacturer Part Number:HUF76409D3
  • Package Shape:RECTANGULAR
  • Manufacturer:Rochester Electronics LLC
  • Number of Elements:1
  • Part Life Cycle Code:Active
  • Ihs Manufacturer:ROCHESTER ELECTRONICS LLC
  • Risk Rank:5.31
  • Drain Current-Max (ID):18 A
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Series:-
  • JESD-609 Code:e0
  • Pbfree Code:No
  • Terminal Finish:TIN LEAD
  • Technology:MOSFET (Metal Oxide)
  • Terminal Position:SINGLE
  • Terminal Form:THROUGH-HOLE
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Reach Compliance Code:unknown
  • JESD-30 Code:R-PSIP-T3
  • Qualification Status:COMMERCIAL
  • Configuration:SINGLE WITH BUILT-IN DIODE
  • Operating Mode:ENHANCEMENT MODE
  • Case Connection:DRAIN
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:63mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds:485 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Drain to Source Voltage (Vdss):60 V
  • Vgs (Max):±16V
  • Polarity/Channel Type:N-CHANNEL
  • JEDEC-95 Code:TO-251AA
  • Drain-source On Resistance-Max:0.075 Ω
  • DS Breakdown Voltage-Min:60 V
  • FET Technology:METAL-OXIDE SEMICONDUCTOR
  • FET Feature:-

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