Главное Дискретные полупроводниковые Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные HUF76409D3
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HUF76409D3
- Fairchild Semiconductor
- Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
- TO-251-3 Short Leads, IPak, TO-251AA
- Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
- Surface Mount:NO
- Supplier Device Package:I-PAK
- Number of Terminals:3
- Transistor Element Material:SILICON
- Package:Bulk
- Current - Continuous Drain (Id) @ 25℃:18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Mfr:Fairchild Semiconductor
- Power Dissipation (Max):49W (Tc)
- Product Status:Active
- Package Style:IN-LINE
- Moisture Sensitivity Levels:NOT SPECIFIED
- Package Body Material:PLASTIC/EPOXY
- Reflow Temperature-Max (s):NOT SPECIFIED
- Rohs Code:No
- Manufacturer Part Number:HUF76409D3
- Package Shape:RECTANGULAR
- Manufacturer:Rochester Electronics LLC
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:ROCHESTER ELECTRONICS LLC
- Risk Rank:5.31
- Drain Current-Max (ID):18 A
- Operating Temperature:-55°C ~ 175°C (TJ)
- Series:-
- JESD-609 Code:e0
- Pbfree Code:No
- Terminal Finish:TIN LEAD
- Technology:MOSFET (Metal Oxide)
- Terminal Position:SINGLE
- Terminal Form:THROUGH-HOLE
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- JESD-30 Code:R-PSIP-T3
- Qualification Status:COMMERCIAL
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:63mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds:485 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
- Drain to Source Voltage (Vdss):60 V
- Vgs (Max):±16V
- Polarity/Channel Type:N-CHANNEL
- JEDEC-95 Code:TO-251AA
- Drain-source On Resistance-Max:0.075 Ω
- DS Breakdown Voltage-Min:60 V
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- FET Feature:-
Со склада 0
Итого $0.00000