BUK7535-55A,127

Name: NXP USA Inc. BUK7535-55A,127
Brand: NXP USA Inc.
Rating: 4.7 (11 reviews)

NXP USA Inc.
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-220-3
N-channel TrenchMOS standard level FET TO-220 3-Pin
Date Sheet

Lagernummer 9942

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mounting Type：Through Hole
Package / Case：TO-220-3
Surface Mount：NO
Supplier Device Package：TO-220AB
Number of Terminals：3
Transistor Element Material：SILICON
Package：Tube
Current - Continuous Drain (Id) @ 25℃：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：NXP USA Inc.
Power Dissipation (Max)：85W (Tc)
Product Status：Active
Package Description：PLASTIC, SC-46, 3 PIN
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Manufacturer Package Code：SOT78A
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：175 °C
Rohs Code：Yes
Manufacturer Part Number：BUK7535-55A,127
Package Shape：RECTANGULAR
Manufacturer：NXP Semiconductors
Number of Elements：1
Part Life Cycle Code：Transferred
Ihs Manufacturer：NXP SEMICONDUCTORS
Risk Rank：5.18
Part Package Code：TO-220
Drain Current-Max (ID)：35 A
Operating Temperature：-55°C ~ 175°C (TJ)
Series：TrenchMOS™
JESD-609 Code：e3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Additional Feature：ESD PROTECTED
HTS Code：8541.29.00.75
Subcategory：FET General Purpose Power
Technology：MOSFET (Metal Oxide)
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
Pin Count：3
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Brand Name：NXP Semiconductor
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：872 pF @ 25 V
Drain to Source Voltage (Vdss)：55 V
Vgs (Max)：±20V
Polarity/Channel Type：N-CHANNEL
JEDEC-95 Code：TO-220AB
Drain Current-Max (Abs) (ID)：35 A
Drain-source On Resistance-Max：0.035 Ω
Pulsed Drain Current-Max (IDM)：139 A
DS Breakdown Voltage-Min：55 V
Avalanche Energy Rating (Eas)：49 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)：85 W
FET Feature：-

Со склада 9942

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