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GS8161E36DGT-333IV
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GSI Technology
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Память
- TQFP-100
- Cache SRAM, 512KX36, 5ns, CMOS, PQFP100, TQFP-100
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Package / Case：TQFP-100
- Maximum Clock Rate：200@Flow-Through/333@Pipelined MHz
- Supplier Package：TQFP
- Data Rate Architecture：SDR
- Typical Operating Supply Voltage：1.8, 2.5 V
- Minimum Operating Supply Voltage：1.7, 2.3 V
- Timing Type：Synchronous
- Number of Words：512 kWords
- Number of I/O Lines：36 Bit
- Maximum Operating Supply Voltage：2, 2.7 V
- Mounting：Surface Mount
- Moisture Sensitive：Yes
- Maximum Clock Frequency：333 MHz
- Maximum Operating Temperature：+ 85 C
- Supply Voltage-Max：2.7 V
- Minimum Operating Temperature：- 40 C
- Factory Pack QuantityFactory Pack Quantity：18
- Supply Voltage-Min：1.7 V
- Mounting Styles：SMD/SMT
- Interface Type：Parallel
- Manufacturer：GSI Technology
- Brand：GSI Technology
- Tradename：SyncBurst
- RoHS：Details
- Memory Types：SDR
- Usage Level：Industrial grade
- Operating Temperature：-40 to 85 °C
- Series：GS8161E36DGT
- Packaging：Tray
- Type：DCD Pipeline/Flow Through
- Subcategory：Memory & Data Storage
- Pin Count：100
- Memory Size：18 Mbit
- Number of Ports：4
- Supply Current-Max：260 mA, 330 mA
- Access Time：5 ns
- Architecture：Flow-Through/Pipelined
- Organization：512 k x 36
- Address Bus Width：19 Bit
- Product Type：SRAM
- Density：18 Mbit
- Screening Level：Industrial
- Product Category：SRAM
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