NE3510M04-T2-A

Name: Renesas Electronics America NE3510M04-T2-A
Brand: Renesas Electronics America
Price: 0.8267328 USD
Availability: InStock
Rating: 4.8 (17 reviews)

Renesas Electronics America
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
SOT-343F
NE3510M04-T2-A
Date Sheet

Lagernummer 124848

1+： $0.82673
10+： $0.77994
100+： $0.73579
500+： $0.69414
1000+： $0.65485

Zwischensummenbetrag $0.82673

Спецификация Часто задаваемые вопросы

Package / Case：SOT-343F
Surface Mount：YES
Supplier Device Package：M04
Number of Terminals：4
Transistor Element Material：GALLIUM ARSENIDE
Package：Bulk
Mfr：Renesas Electronics America Inc
Product Status：Obsolete
Voltage Rated：4 V
Package Description：SMALL OUTLINE, R-PDSO-F4
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：NE3510M04-T2-A
Package Shape：RECTANGULAR
Manufacturer：Renesas Electronics Corporation
Number of Elements：1
Part Life Cycle Code：Obsolete
Ihs Manufacturer：RENESAS ELECTRONICS CORP
Risk Rank：5.27
Drain Current-Max (ID)：0.03 A
Series：-
Pbfree Code：Yes
ECCN Code：EAR99
Subcategory：Other Transistors
Current Rating (Amps)：97mA
Terminal Position：DUAL
Terminal Form：FLAT
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
Frequency：4GHz
Pin Count：4
JESD-30 Code：R-PDSO-F4
Qualification Status：Not Qualified
Brand Name：Renesas
Configuration：SINGLE
Operating Mode：DEPLETION MODE
Case Connection：DRAIN
Current - Test：15 mA
Transistor Application：AMPLIFIER
Polarity/Channel Type：N-CHANNEL
Transistor Type：HFET
Gain：16dB
DS Breakdown Voltage-Min：3 V
Power - Output：-
FET Technology：JUNCTION
Power Dissipation-Max (Abs)：0.125 W
Noise Figure：0.45dB
Voltage - Test：2 V
Highest Frequency Band：S BAND
Power Gain-Min (Gp)：14.5 dB

Со склада 124848

1+： $0.82673
10+： $0.77994
100+： $0.73579
500+： $0.69414
1000+： $0.65485

Итого $0.82673