IPA60R299CPXK

Name: Infineon IPA60R299CPXK
Brand: Infineon
Rating: 4.5 (14 reviews)

Infineon
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-220FP-3
Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Date Sheet

Lagernummer 18

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Package / Case：TO-220FP-3
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3-31
Continuous Drain Current Id：11
Id - Continuous Drain Current：11 A
Typical Turn-Off Delay Time：40 ns
RoHS：Details
Rds On - Drain-Source Resistance：270 mOhms
Tradename：CoolMOS
Qg - Gate Charge：29 nC
Brand：Infineon Technologies
Manufacturer：Infineon
Part # Aliases：SP000096438 IPA60R299CPXKSA1
Channel Mode：Enhancement
Mounting Styles：Through Hole
Factory Pack QuantityFactory Pack Quantity：500
Minimum Operating Temperature：- 55 C
Unit Weight：0.068784 oz
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Maximum Operating Temperature：+ 150 C
Transistor Polarity：N-Channel
Pd - Power Dissipation：33 W
Vgs th - Gate-Source Threshold Voltage：2.5 V
Typical Turn-On Delay Time：10 ns
Vds - Drain-Source Breakdown Voltage：600 V
Package：Bulk
Current - Continuous Drain (Id) @ 25℃：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Infineon Technologies
Power Dissipation (Max)：33W (Tc)
Product Status：Active
Packaging：Tube
Series：CoolMOS CE
Operating Temperature：-55°C ~ 150°C (TJ)
Subcategory：MOSFETs
Technology：Si
Configuration：Single
Number of Channels：1 Channel
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id：3.5V @ 440µA
Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
Rise Time：5 ns
Drain to Source Voltage (Vdss)：600 V
Vgs (Max)：±20V
Product Type：MOSFET
Transistor Type：1 N-Channel
Channel Type：N
FET Feature：-
Product Category：MOSFET
Length：10.65 mm
Height：16.15 mm
Width：4.85 mm

Со склада 18

Итого $0.00000