Изображение служит лишь для справки
BCR129SE6327
-
Infineon
-
Дискретные полупроводниковые
- TO-236-3, SC-59, SOT-23-3
- Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SOT-363, 6 PIN
Date Sheet
Lagernummer 129000
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Surface Mount：YES
- Supplier Device Package：PG-SOT23-3-11
- Number of Terminals：6
- Transistor Element Material：SILICON
- Package：Bulk
- Current-Collector (Ic) (Max)：100mA
- Mfr：Infineon Technologies
- Product Status：Active
- Package Description：SMALL OUTLINE, R-PDSO-G6
- Package Style：SMALL OUTLINE
- Moisture Sensitivity Levels：1
- Package Body Material：PLASTIC/EPOXY
- Operating Temperature-Max：150 °C
- Rohs Code：Yes
- Transition Frequency-Nom (fT)：150 MHz
- Manufacturer Part Number：BCR129SE6327
- Package Shape：RECTANGULAR
- Manufacturer：Infineon Technologies AG
- Number of Elements：2
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：INFINEON TECHNOLOGIES AG
- Risk Rank：5.81
- Series：-
- Additional Feature：BUILT-IN BIAS RESISTOR
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Reach Compliance Code：compliant
- JESD-30 Code：R-PDSO-G6
- Configuration：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max：250mW
- Transistor Application：SWITCHING
- Polarity/Channel Type：NPN
- Transistor Type：2 PNP - Pre-Biased (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 5mA, 5V
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Frequency - Transition：150MHz
- Collector Current-Max (IC)：0.1 A
- DC Current Gain-Min (hFE)：120
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：-
- Collector-Emitter Voltage-Max：50 V
Со склада 129000
Итого $0.00000
Центр поддержки
услуга покупки
пункты договора
Корпорация Whisyee
Контакты