2SC2713-GR(TE85L,F

Name: Toshiba 2SC2713-GR(TE85L,F
Brand: Toshiba
Rating: 4.5 (9 reviews)

Toshiba
Дискретные полупроводниковые
SC-59-3
Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R
Date Sheet

Lagernummer 791

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Factory Lead Time：16 Weeks
Package / Case：SC-59-3
Surface Mount：YES
Number of Terminals：3
Transistor Element Material：SILICON
Transistor Polarity：NPN
Emitter- Base Voltage VEBO：5 V
Pd - Power Dissipation：150 mW
Maximum Operating Temperature：+ 125 C
DC Collector/Base Gain hfe Min：200
Unit Weight：0.000423 oz
Minimum Operating Temperature：-
Factory Pack QuantityFactory Pack Quantity：3000
Mounting Styles：SMD/SMT
Gain Bandwidth Product fT：100 MHz
Part # Aliases：2SC2713-GR,LF
Manufacturer：Toshiba
Brand：Toshiba
Maximum DC Collector Current：100 mA
DC Current Gain hFE Max：700
RoHS：Details
Collector- Emitter Voltage VCEO Max：120 V
Package Description：SMALL OUTLINE, R-PDSO-G3
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Operating Temperature-Max：125 °C
Transition Frequency-Nom (fT)：100 MHz
Manufacturer Part Number：2SC2713-GR(TE85L,F
Package Shape：RECTANGULAR
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：TOSHIBA CORP
Risk Rank：1.5
Series：2SC2713
Packaging：MouseReel
Additional Feature：LOW NOISE
Subcategory：Transistors
Technology：Si
Terminal Position：DUAL
Terminal Form：GULL WING
Reach Compliance Code：unknown
JESD-30 Code：R-PDSO-G3
Configuration：Single
Transistor Application：AMPLIFIER
Polarity/Channel Type：NPN
Product Type：BJTs - Bipolar Transistors
Collector Base Voltage (VCBO)：120 V
Power Dissipation-Max (Abs)：0.15 W
Collector Current-Max (IC)：0.1 A
DC Current Gain-Min (hFE)：200
Continuous Collector Current：100
Collector-Emitter Voltage-Max：120 V
VCEsat-Max：0.3 V
Power Dissipation Ambient-Max：0.15 W
Product Category：Bipolar Transistors - BJT

Со склада 791

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