GS81302TT11E-500

Name: GSI Technology GS81302TT11E-500
Brand: GSI Technology
Rating: 5 (14 reviews)

GSI Technology
Память
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DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
Date Sheet

Lagernummer 2136

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Factory Lead Time：12 Weeks
Surface Mount：YES
Number of Terminals：165
Maximum Clock Rate：500 MHz
Supplier Package：FBGA
Data Rate Architecture：DDR
Typical Operating Supply Voltage：1.8000 V
Minimum Operating Supply Voltage：1.7 V
Timing Type：Synchronous
Number of Words：16 MWords
Number of I/O Lines：9 Bit
Maximum Operating Supply Voltage：1.9 V
Mounting：Surface Mount
Package Description：LBGA,
Package Style：GRID ARRAY, LOW PROFILE
Number of Words Code：16000000
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Access Time-Max：0.45 ns
Operating Temperature-Max：70 °C
Rohs Code：No
Manufacturer Part Number：GS81302TT11E-500
Supply Voltage-Nom (Vsup)：1.8 V
Package Code：LBGA
Package Shape：RECTANGULAR
Manufacturer：GSI Technology
Part Life Cycle Code：Not Recommended
Ihs Manufacturer：GSI TECHNOLOGY
Risk Rank：5.06
Part Package Code：BGA
Usage Level：Commercial grade
Operating Temperature：0 to 85 °C
Pbfree Code：No
ECCN Code：3A991.B.2.B
Additional Feature：PIPELINED ARCHITECTURE
HTS Code：8542.32.00.41
Technology：CMOS
Terminal Position：BOTTOM
Terminal Form：BALL
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Number of Functions：1
Terminal Pitch：1 mm
Reach Compliance Code：compliant
Pin Count：165
JESD-30 Code：R-PBGA-B165
Qualification Status：Not Qualified
Supply Voltage-Max (Vsup)：1.9 V
Temperature Grade：COMMERCIAL
Supply Voltage-Min (Vsup)：1.7 V
Number of Ports：1
Operating Mode：SYNCHRONOUS
Architecture：Pipelined
Organization：16MX9
Seated Height-Max：1.5 mm
Memory Width：9
Address Bus Width：23 Bit
Density：144 Mbit
Memory Density：150994944 bit
Screening Level：Commercial
Parallel/Serial：PARALLEL
Memory IC Type：DDR SRAM
Width：15 mm
Length：17 mm

Со склада 2136

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