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2SC2712-GR(F)
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Toshiba
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Дискретные полупроводниковые
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- 150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
Date Sheet
Lagernummer 847
- 1+： $0.10770
- 10+： $0.10160
- 100+： $0.09585
- 500+： $0.09043
- 1000+： $0.08531
Zwischensummenbetrag $0.10770
Спецификация Часто задаваемые вопросы
- Mounting Type：Surface Mount
- Surface Mount：YES
- Number of Terminals：3
- Transistor Element Material：SILICON
- Number of Elements per Chip：1
- Dimensions：1.1 x 2.9 x 1.5mm
- Package Type：SOT-346 (SC-59)
- Maximum Operating Temperature：+125 °C
- Maximum Collector Emitter Voltage：50 V
- Maximum DC Collector Current：150 mA
- Maximum Operating Frequency：80 MHz
- Minimum DC Current Gain：70
- Package Description：SMALL OUTLINE, R-PDSO-G3
- Package Style：SMALL OUTLINE
- Package Body Material：PLASTIC/EPOXY
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：125 °C
- Rohs Code：Yes
- Transition Frequency-Nom (fT)：80 MHz
- Manufacturer Part Number：2SC2712-GR(F)
- Package Shape：RECTANGULAR
- Manufacturer：Toshiba America Electronic Components
- Number of Elements：1
- Part Life Cycle Code：Obsolete
- Samacsys Description：Vceo50V,Ic0.15A,Vce(sat)0.25V,hfe200to40 Toshiba 2SC2712-GR(F) NPN Bipolar Transistor, 0.15 A, 50 V, 3-Pin SC-59
- Ihs Manufacturer：TOSHIBA CORP
- Risk Rank：5.57
- ECCN Code：EAR99
- Additional Feature：LOW NOISE
- HTS Code：8541.21.00.95
- Subcategory：Other Transistors
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：unknown
- Pin Count：3
- JESD-30 Code：R-PDSO-G3
- Configuration：SINGLE
- Transistor Application：AMPLIFIER
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Power Dissipation-Max (Abs)：0.15 W
- Collector Current-Max (IC)：0.15 A
- DC Current Gain-Min (hFE)：200
- Collector-Emitter Voltage-Max：50 V
Со склада 847
- 1+： $0.10770
- 10+： $0.10160
- 100+： $0.09585
- 500+： $0.09043
- 1000+： $0.08531
Итого $0.10770
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