IPP70N04S3-07

Name: Infineon IPP70N04S3-07
Brand: Infineon
Rating: 4.7 (15 reviews)

Infineon
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-220-3
Power Field-Effect Transistor, 70A I(D), 40V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Date Sheet

Lagernummer 0

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Mounting Type：Through Hole
Package / Case：TO-220-3
Surface Mount：NO
Supplier Device Package：PG-TO220-3-1
Number of Terminals：3
Transistor Element Material：SILICON
Package：Bulk
Current - Continuous Drain (Id) @ 25℃：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Infineon Technologies
Power Dissipation (Max)：79W (Tc)
Product Status：Active
Part Life Cycle Code：Active
Ihs Manufacturer：ROCHESTER ELECTRONICS LLC
Number of Elements：1
Manufacturer：Rochester Electronics LLC
Package Shape：RECTANGULAR
Manufacturer Part Number：IPP70N04S3-07
Rohs Code：Yes
Reflow Temperature-Max (s)：NOT SPECIFIED
Package Body Material：PLASTIC/EPOXY
Moisture Sensitivity Levels：1
Package Style：FLANGE MOUNT
Package Description：ROHS COMPLIANT, TO-220, 3 PIN
Drain Current-Max (ID)：70 A
Part Package Code：TO-220AB
Risk Rank：5.32
Operating Temperature：-55°C ~ 175°C (TJ)
Series：OptiMOS™T
JESD-609 Code：e3
Pbfree Code：Yes
Terminal Finish：MATTE TIN
Additional Feature：ULTRA LOW RESISTANCE
Technology：MOSFET (Metal Oxide)
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：260
Reach Compliance Code：unknown
Pin Count：3
JESD-30 Code：R-PSFM-T3
Qualification Status：COMMERCIAL
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：6.5mOhm @ 70A, 10V
Vgs(th) (Max) @ Id：4V @ 50µA
Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Drain to Source Voltage (Vdss)：40 V
Vgs (Max)：±20V
Polarity/Channel Type：N-CHANNEL
JEDEC-95 Code：TO-220AB
Drain-source On Resistance-Max：0.0071 Ω
Pulsed Drain Current-Max (IDM)：280 A
DS Breakdown Voltage-Min：40 V
Avalanche Energy Rating (Eas)：145 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-

Со склада 0

Итого $0.00000