IXTT24N50Q

Name: IXYS IXTT24N50Q
Brand: IXYS
Rating: 4.9 (11 reviews)

IXYS
Транзисторы - Полевые (FET), МОП-транзисторы - Одинарные
TO-268-3
MOSFET 24 Amps 500V 0.23 Rds
Date Sheet

Lagernummer 44

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Package / Case：TO-268-3
Mount：Surface Mount
Surface Mount：YES
Number of Terminals：2
Transistor Element Material：SILICON
Mounting Styles：SMD/SMT
Transistor Polarity：N-Channel
Vds - Drain-Source Breakdown Voltage：500 V
Id - Continuous Drain Current：24 A
Rds On - Drain-Source Resistance：240 mOhms
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Pd - Power Dissipation：360 W
Channel Mode：Enhancement
Factory Pack QuantityFactory Pack Quantity：30
Typical Turn-Off Delay Time：46 ns
Typical Turn-On Delay Time：16 ns
Unit Weight：0.158733 oz
RoHS：Compliant
Turn Off Delay Time：46 ns
Package Description：SMALL OUTLINE, R-PSSO-G2
Package Style：SMALL OUTLINE
Moisture Sensitivity Levels：1
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：IXTT24N50Q
Package Shape：RECTANGULAR
Number of Elements：1
Part Life Cycle Code：Not Recommended
Ihs Manufacturer：LITTELFUSE INC
Risk Rank：5.39
Drain Current-Max (ID)：24 A
Packaging：Tube
Series：IXTT24N50
JESD-609 Code：e3
Terminal Finish：Matte Tin (Sn)
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Additional Feature：AVALANCHE RATED
Max Power Dissipation：360 W
Terminal Position：SINGLE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Configuration：Single
Number of Channels：1 Channel
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：360 W
Case Connection：DRAIN
Transistor Application：SWITCHING
Rise Time：20 ns
Drain to Source Voltage (Vdss)：500 V
Polarity/Channel Type：N-CHANNEL
Transistor Type：1 N-Channel
Continuous Drain Current (ID)：24 A
JEDEC-95 Code：TO-268AA
Gate to Source Voltage (Vgs)：30 V
Drain-source On Resistance-Max：0.24 Ω
Drain to Source Breakdown Voltage：500 V
Pulsed Drain Current-Max (IDM)：96 A
Input Capacitance：3 nF
DS Breakdown Voltage-Min：500 V
Avalanche Energy Rating (Eas)：1500 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance：240 mΩ
Rds On Max：240 mΩ
Height：5.1 mm
Length：16.05 mm
Width：14 mm

Со склада 44

Итого $0.00000