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D2225UK
-
Semelab
-
Транзисторы - Полевые (FET), МОП-транзисторы - РЧ
- SOIC-8
- RF MOSFET Transistors Silicon DMOS RF FET 5W-12.5V-1GHz PP
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Package / Case：SOIC-8
- Surface Mount：YES
- Number of Terminals：8
- Transistor Element Material：SILICON
- RoHS：Details
- Transistor Polarity：N-Channel
- Id - Continuous Drain Current：4 A
- Vds - Drain-Source Breakdown Voltage：40 V
- Maximum Operating Temperature：+ 150 C
- Mounting Styles：SMD/SMT
- Pd - Power Dissipation：17.5 W
- Factory Pack QuantityFactory Pack Quantity：50
- Vgs - Gate-Source Voltage：20 V
- Vgs th - Gate-Source Threshold Voltage：0.5 V to 7 V
- Package Description：SMALL OUTLINE, R-XDSO-G8
- Package Style：SMALL OUTLINE
- Package Body Material：UNSPECIFIED
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：200 °C
- Rohs Code：Yes
- Manufacturer Part Number：D2225UK
- Package Shape：RECTANGULAR
- Number of Elements：2
- Part Life Cycle Code：Active
- Ihs Manufacturer：SEMELAB LTD
- Risk Rank：5.11
- Part Package Code：SOT
- Drain Current-Max (ID)：4 A
- JESD-609 Code：e4
- Pbfree Code：No
- ECCN Code：EAR99
- Type：RF Power MOSFET
- Terminal Finish：GOLD
- Additional Feature：LOW NOISE
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：compliant
- Pin Count：8
- JESD-30 Code：R-XDSO-G8
- Qualification Status：Not Qualified
- Operating Frequency：1 GHz
- Configuration：Dual
- Operating Mode：ENHANCEMENT MODE
- Output Power：5 W
- Transistor Application：AMPLIFIER
- Polarity/Channel Type：N-CHANNEL
- Transistor Type：DMOS FET
- Gain：10 dB
- DS Breakdown Voltage-Min：40 V
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Highest Frequency Band：ULTRA HIGH FREQUENCY BAND
Со склада 0
Итого $0.00000
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