IS43LR16320C-5BLI-TR

Name: Integrated Silicon Solution, Inc. (ISSI) IS43LR16320C-5BLI-TR
Brand: Integrated Silicon Solution, Inc. (ISSI)
Rating: 4.9 (11 reviews)

Integrated Silicon Solution, Inc. (ISSI)
Память
BGA-60
DRAM 512M, 1.8V, Mobile DDR, 32Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS, IT, T&R
Date Sheet

Lagernummer 25

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Factory Lead Time：12 Weeks
Package / Case：BGA-60
Mounting Type：Surface Mount
Surface Mount：YES
Supplier Device Package：60-TFBGA (8x10)
Number of Terminals：60
RoHS：Details
Mounting Styles：SMD/SMT
Maximum Clock Frequency：200 MHz
Supply Voltage-Min：1.7 V
Minimum Operating Temperature：- 40 C
Maximum Operating Temperature：+ 85 C
Factory Pack QuantityFactory Pack Quantity：2000
Tradename：PowerSaver
Package：Tape & Reel (TR)
Mfr：ISSI, Integrated Silicon Solution Inc
Product Status：Active
Memory Types：Volatile
Supply Voltage-Max：1.95 V
Package Description：TFBGA,
Package Style：GRID ARRAY, THIN PROFILE, FINE PITCH
Number of Words Code：32000000
Package Body Material：PLASTIC/EPOXY
Operating Temperature-Min：-40 °C
Reflow Temperature-Max (s)：NOT SPECIFIED
Access Time-Max：5 ns
Operating Temperature-Max：85 °C
Rohs Code：Yes
Manufacturer Part Number：IS43LR16320C-5BLI-TR
Number of Words：33554432 words
Supply Voltage-Nom (Vsup)：1.8 V
Package Code：TFBGA
Package Shape：RECTANGULAR
Part Life Cycle Code：Active
Ihs Manufacturer：INTEGRATED SILICON SOLUTION INC
Risk Rank：5.69
Series：IS43LR16320C
Packaging：Reel
Operating Temperature：-40°C ~ 85°C (TA)
Type：SDRAM Mobile - DDR
Additional Feature：AUTO/SELF REFRESH
Technology：SDRAM - Mobile LPDDR
Voltage - Supply：1.7V ~ 1.95V
Terminal Position：BOTTOM
Terminal Form：BALL
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Number of Functions：1
Terminal Pitch：0.8 mm
Reach Compliance Code：compliant
JESD-30 Code：R-PBGA-B60
Supply Voltage-Max (Vsup)：1.95 V
Temperature Grade：INDUSTRIAL
Supply Voltage-Min (Vsup)：1.7 V
Memory Size：512 Mbit
Number of Ports：1
Operating Mode：SYNCHRONOUS
Clock Frequency：200 MHz
Supply Current-Max：70 mA
Access Time：5 ns
Memory Format：DRAM
Memory Interface：LVCMOS
Data Bus Width：16 bit
Organization：32 M x 16
Seated Height-Max：1.1 mm
Memory Width：16
Write Cycle Time - Word, Page：15ns
Memory Density：536870912 bit
Memory IC Type：DDR DRAM
Access Mode：FOUR BANK PAGE BURST
Self Refresh：YES
Memory Organization：32M x 16
Width：8 mm
Length：10 mm

Со склада 25

Итого $0.00000