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W29N02GVBIAF TR
Lagernummer 21
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- EU RoHS:Compliant
- ECCN (US):3A991.b.1.a
- HTS:8542.32.00.71
- Automotive:No
- PPAP:No
- Cell Type:SLC NAND
- Chip Density (bit):2G
- Address Bus Width (bit):28
- Number of Bits/Word (bit):8
- Number of Words:256M
- Programmability:Yes
- Timing Type:Asynchronous
- Max. Access Time (ns):25
- Maximum Erase Time (S):0.01/Block
- Maximum Programming Time (ms):0.7
- Interface Type:Parallel
- Minimum Operating Supply Voltage (V):2.7
- Typical Operating Supply Voltage (V):3.3
- Maximum Operating Supply Voltage (V):3.6
- Programming Voltage (V):2.7 to 3.6
- Program Current (mA):35
- Minimum Operating Temperature (°C):-40
- Maximum Operating Temperature (°C):85
- Supplier Temperature Grade:Industrial
- Command Compatible:No
- ECC Support:Yes
- Support of Page Mode:No
- Mounting:Surface Mount
- Package Height:0.6(Max)
- Package Width:9
- Package Length:11
- PCB changed:63
- Supplier Package:VFBGA
- Supply Voltage-Nom (Vsup):2.7V - 3.6V
- Part Status:Active
- Type:SLC NAND Flash
- Pin Count:63
- Speed:40MHz
- Architecture:Sectored
- Organization:High Quality Single Level Cell (SLC) Technology Standard ONFI NAND Command Set
- Memory Density:2Gb
- Boot Block:No
- Temperature:40ºC ~ 85ºC / -40ºC ~ 105ºC
Со склада 21
Итого $0.00000