JAN2N3766

Name: Microchip JAN2N3766
Brand: Microchip
Rating: 4.9 (6 reviews)

Microchip
Интегральные схемы (ИС)
TO-213AA, TO-66-2
Trans GP BJT NPN 60V 4A 25000mW 3-Pin(2+Tab) TO-66 Tray
Date Sheet

Lagernummer 22

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы

Lifecycle Status：Production (Last Updated: 2 months ago)
Surface Mount：NO
Mounting Type：Through Hole
Package / Case：TO-213AA, TO-66-2
Mount：Through Hole
Number of Pins：3
Supplier Device Package：TO-66 (TO-213AA)
Number of Terminals：2
Transistor Element Material：SILICON
Manufacturer Part Number：JAN2N3766
Rohs Code：No
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Part Package Code：TO-66
Package Description：TO-66, 2 PIN
Risk Rank：1.51
Number of Elements：1
Operating Temperature-Max：200 °C
Package Body Material：METAL
Package Shape：ROUND
Package Style：FLANGE MOUNT
Reflow Temperature-Max (s)：NOT SPECIFIED
Transition Frequency-Nom (fT)：10 MHz
Package：Bulk
Current-Collector (Ic) (Max)：500 µA
Mfr：Microchip Technology
Product Status：Active
Schedule B：8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
RoHS：Non-Compliant
Operating Temperature：-65°C ~ 200°C (TJ)
Series：Military, MIL-PRF-19500/518
Packaging：Bulk
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
Max Operating Temperature：200 °C
Min Operating Temperature：-65 °C
Max Power Dissipation：25 W
Terminal Position：BOTTOM
Terminal Form：PIN/PEG
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
Pin Count：3
Reference Standard：MIL-19500/518C
JESD-30 Code：O-MBFM-P2
Qualification Status：Qualified
Polarity：NPN
Configuration：SINGLE
Power Dissipation：25 W
Case Connection：COLLECTOR
Power - Max：25 W
Transistor Application：SWITCHING
Polarity/Channel Type：NPN
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：60 V
Max Collector Current：4 A
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 500mA, 5V
Current - Collector Cutoff (Max)：500µA
JEDEC-95 Code：TO-213AA
Vce Saturation (Max) @ Ib, Ic：2.5V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)：60 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：80 V
Emitter Base Voltage (VEBO)：6 V
Collector Current-Max (IC)：4 A
DC Current Gain-Min (hFE)：20
Collector-Emitter Voltage-Max：60 V
Radiation Hardening：No

Со склада 22

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