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IRFS654BT_FP001
- ON Semiconductor
- Интегральные схемы (ИС)
- -
- MOSFET 250V N-Channel B-FET
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount:NO
- Number of Terminals:3
- Transistor Element Material:SILICON
- Number of Elements:1
- Operating Temperature-Max:150 °C
- Package Body Material:PLASTIC/EPOXY
- Package Shape:RECTANGULAR
- Package Style:FLANGE MOUNT
- Drain Current-Max (ID):21 A
- Risk Rank:5.7
- Package Description:FLANGE MOUNT, R-PSFM-T3
- Part Package Code:TO-220F
- Ihs Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
- Part Life Cycle Code:Obsolete
- Rohs Code:Yes
- Manufacturer Part Number:IRFS654BT_FP001
- JESD-609 Code:e3
- ECCN Code:EAR99
- Terminal Finish:Matte Tin (Sn)
- Terminal Position:SINGLE
- Terminal Form:THROUGH-HOLE
- Reach Compliance Code:not_compliant
- Pin Count:3
- JESD-30 Code:R-PSFM-T3
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:ISOLATED
- Transistor Application:SWITCHING
- Polarity/Channel Type:N-CHANNEL
- Drain Current-Max (Abs) (ID):12 A
- Drain-source On Resistance-Max:0.14 Ω
- Pulsed Drain Current-Max (IDM):84 A
- DS Breakdown Voltage-Min:250 V
- Avalanche Energy Rating (Eas):700 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs):50 W
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