UF3055L-TN3-R

Name: Diodes UF3055L-TN3-R
Brand: Diodes
Rating: 4.6 (11 reviews)

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Спецификация Часто задаваемые вопросы

Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Surface Mount：YES
Number of Terminals：2
Transistor Element Material：SILICON
Package Description：SMALL OUTLINE, R-PDSO-G2
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：Yes
Manufacturer Part Number：UF3055L-TN3-R
Package Shape：RECTANGULAR
Manufacturer：Unisonic Technologies Co Ltd
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：UNISONIC TECHNOLOGIES CO LTD
Risk Rank：5.68
Part Package Code：TO-252
Drain Current-Max (ID)：3 A
Operating Temperature：-20°C ~ 70°C
Series：XPRESSO™ FXO-PC52
Packaging：Strip
Size / Dimension：0.203 L x 0.132 W (5.15mm x 3.35mm)
Part Status：Active
ECCN Code：EAR99
Type：XO (Standard)
HTS Code：8541.29.00.95
Voltage - Supply：2.5V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
Frequency：750MHz
Frequency Stability：±100ppm
Output：LVPECL
Pin Count：4
JESD-30 Code：R-PDSO-G2
Function：Enable/Disable
Base Resonator：Crystal
Current - Supply (Max)：72mA
Current - Supply (Disable) (Max)：--
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Transistor Application：SWITCHING
Polarity/Channel Type：N-CHANNEL
JEDEC-95 Code：TO-252
Drain-source On Resistance-Max：0.11 Ω
Pulsed Drain Current-Max (IDM)：9 A
DS Breakdown Voltage-Min：60 V
Avalanche Energy Rating (Eas)：74 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Height Seated (Max)：0.055 (1.40mm)
Ratings：--

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