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Lagernummer 0

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Спецификация Часто задаваемые вопросы
  • Contact Plating:50 microinches Gold Plate
  • Mounting Type:Wall - Front Mount - Thru Holes
  • Surface Mount:NO
  • Shell Material:Stainless Steel
  • Insert Material:Hard Dielectric
  • Number of Terminals:3
  • Transistor Element Material:SILICON
  • Contact Sizes:79#22D
  • Service Rating:M
  • Insert Arrangement:G35
  • Contact Materials:Copper Alloy
  • Package Description:FLANGE MOUNT, R-PSFM-T3
  • Package Style:FLANGE MOUNT
  • Package Body Material:PLASTIC/EPOXY
  • Operating Temperature-Max:150 °C
  • Rohs Code:No
  • Manufacturer Part Number:APT5025BNR
  • Turn-on Time-Max (ton):90 ns
  • Package Shape:RECTANGULAR
  • Manufacturer:Advanced Power Technology
  • Number of Elements:1
  • Part Life Cycle Code:Obsolete
  • Ihs Manufacturer:ADVANCED POWER TECHNOLOGY INC
  • Turn-off Time-Max (toff):220 ns
  • Risk Rank:5.8
  • Drain Current-Max (ID):23 A
  • JESD-609 Code:e0
  • Terminal Finish:Tin/Lead (Sn/Pb)
  • Additional Feature:AVALANCHE RATED
  • Subcategory:FET General Purpose Power
  • Terminal Position:SINGLE
  • Terminal Form:THROUGH-HOLE
  • Shielding:Yes
  • Reach Compliance Code:unknown
  • JESD-30 Code:R-PSFM-T3
  • Qualification Status:Not Qualified
  • Contact Style:Socket
  • Configuration:SINGLE WITH BUILT-IN DIODE
  • Sealing:Meets IP67
  • Operating Mode:ENHANCEMENT MODE
  • Case Connection:DRAIN
  • Polarity/Channel Type:N-CHANNEL
  • JEDEC-95 Code:TO-247AD
  • Drain Current-Max (Abs) (ID):23 A
  • Drain-source On Resistance-Max:0.25 Ω
  • Pulsed Drain Current-Max (IDM):92 A
  • DS Breakdown Voltage-Min:500 V
  • Avalanche Energy Rating (Eas):1210 mJ
  • FET Technology:METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs):310 W
  • Shell Plating:Passivated
  • Feedback Cap-Max (Crss):270 pF
  • Power Dissipation Ambient-Max:360 W

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