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FQB9N25C
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Surface Mount：YES
- Number of Terminals：2
- Transistor Element Material：SILICON
- Product Status：Active
- Mfr：PEI-Genesis
- Package：Bulk
- Number of Elements：1
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：FAIRCHILD SEMICONDUCTOR CORP
- Risk Rank：5.75
- Drain Current-Max (ID)：8.8 A
- Package Description：SMALL OUTLINE, R-PSSO-G2
- Package Style：SMALL OUTLINE
- Package Body Material：PLASTIC/EPOXY
- Operating Temperature-Max：150 °C
- Manufacturer Part Number：FQB9N25C
- Package Shape：RECTANGULAR
- Manufacturer：Fairchild Semiconductor Corporation
- Series：*
- ECCN Code：EAR99
- Additional Feature：FAST SWITCHING
- Subcategory：FET General Purpose Power
- Terminal Position：SINGLE
- Terminal Form：GULL WING
- Reach Compliance Code：unknown
- Pin Count：3
- JESD-30 Code：R-PSSO-G2
- Qualification Status：Not Qualified
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- Case Connection：DRAIN
- Transistor Application：SWITCHING
- Polarity/Channel Type：N-CHANNEL
- Drain Current-Max (Abs) (ID)：8.8 A
- Drain-source On Resistance-Max：0.43 Ω
- Pulsed Drain Current-Max (IDM)：35.2 A
- DS Breakdown Voltage-Min：250 V
- Avalanche Energy Rating (Eas)：285 mJ
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)：74 W
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