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D1002UK
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Seme LAB
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Транзисторы - Полевые (FET), МОП-транзисторы - РЧ
- DA
- N-Channel MOSFET, 10 A, 70 V, 4-Pin DA Semelab D1002UK
Date Sheet
Lagernummer 8
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Mounting Type：Screw Mount
- Package / Case：DA
- Mount：Panel
- Surface Mount：YES
- Number of Pins：4
- Number of Terminals：4
- Transistor Element Material：SILICON
- Number of Elements per Chip：1
- Package Type：DA
- Maximum Operating Temperature：+200 °C
- Channel Mode：Enhancement
- Vds - Drain-Source Breakdown Voltage：70 V
- Vgs th - Gate-Source Threshold Voltage：1 V to 7 V
- Pd - Power Dissipation：87 W
- Transistor Polarity：N-Channel
- Vgs - Gate-Source Voltage：20 V
- Unit Weight：0.381488 oz
- Factory Pack QuantityFactory Pack Quantity：25
- Mounting Styles：SMD/SMT
- Manufacturer：TT Electronics
- Brand：Semelab / TT Electronics
- Id - Continuous Drain Current：10 A
- RoHS：Compliant
- Package Description：FLANGE MOUNT, O-CRFM-F4
- Package Style：FLANGE MOUNT
- Package Body Material：CERAMIC, METAL-SEALED COFIRED
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：200 °C
- Rohs Code：Yes
- Manufacturer Part Number：D1002UK
- Package Shape：ROUND
- Number of Elements：1
- Part Life Cycle Code：Active
- Ihs Manufacturer：SEMELAB LTD
- Risk Rank：5.05
- Series：TetraFET
- JESD-609 Code：e4
- Pbfree Code：No
- ECCN Code：EAR99
- Type：RF Power MOSFET
- Terminal Finish：GOLD
- Max Operating Temperature：200 °C
- Additional Feature：LOW NOISE
- Subcategory：MOSFETs
- Max Power Dissipation：87 W
- Technology：Si
- Terminal Position：RADIAL
- Terminal Form：FLAT
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：compliant
- Pin Count：4
- JESD-30 Code：O-CRFM-F4
- Qualification Status：Not Qualified
- Operating Frequency：175 MHz
- Configuration：Single
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Case Connection：SOURCE
- Output Power：40 W
- Transistor Application：AMPLIFIER
- Polarity/Channel Type：N-CHANNEL
- Product Type：RF MOSFET Transistors
- Transistor Type：DMOS FET
- Continuous Drain Current (ID)：10 A
- Gate to Source Voltage (Vgs)：20 V
- Gain：16 dB
- Input Capacitance：120 pF
- DS Breakdown Voltage-Min：70 V
- Channel Type：N
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Highest Frequency Band：ULTRA HIGH FREQUENCY BAND
- Product Category：RF MOSFET Transistors
- Width：9.52mm
- Height：6.6mm
- Length：24.76mm
Со склада 8
Итого $0.00000
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