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MMBFJ111
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ON Semiconductor
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Транзисторы - JFET
- TO-236-3, SC-59, SOT-23-3
- JFET N-CH 35V 350MW SOT23
Date Sheet
Lagernummer 967
- 1+： $0.16729
- 10+： $0.15782
- 100+： $0.14889
- 500+： $0.14046
- 1000+： $0.13251
Zwischensummenbetrag $0.16729
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 11 hours ago)
- Factory Lead Time：16 Weeks
- Contact Plating：Tin
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Number of Pins：3
- Weight：30mg
- Transistor Element Material：SILICON
- Breakdown Voltage / V：-35V
- Number of Elements：1
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2008
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- HTS Code：8541.21.00.95
- Voltage - Rated DC：35V
- Max Power Dissipation：350mW
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Current Rating：20mA
- Base Part Number：MBFJ111
- Element Configuration：Single
- Operating Mode：DEPLETION MODE
- Power Dissipation：350mW
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Drain to Source Voltage (Vdss)：35V
- Continuous Drain Current (ID)：20mA
- Gate to Source Voltage (Vgs)：-35V
- FET Technology：JUNCTION
- Drain to Source Resistance：30Ohm
- Feedback Cap-Max (Crss)：5 pF
- Current - Drain (Idss) @ Vds (Vgs=0)：20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id：3V @ 1μA
- Resistance - RDS(On)：30Ohm
- Height：1.04mm
- Length：2.9mm
- Width：1.3mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 967
- 1+： $0.16729
- 10+： $0.15782
- 100+： $0.14889
- 500+： $0.14046
- 1000+： $0.13251
Итого $0.16729
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