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  • Surface Mount:YES
  • Number of Terminals:100
  • Package Description:TQFP, TQFP100,.7X.9
  • Package Style:FLATPACK, THIN PROFILE
  • Number of Words Code:2000000
  • Package Body Material:PLASTIC/EPOXY
  • Package Equivalence Code:TQFP100,.7X.9
  • Reflow Temperature-Max (s):NOT SPECIFIED
  • Access Time-Max:5.5 ns
  • Operating Temperature-Max:65 °C
  • Rohs Code:No
  • Manufacturer Part Number:K4D623237A-QC60
  • Clock Frequency-Max (fCLK):166 MHz
  • Number of Words:2097152 words
  • Supply Voltage-Nom (Vsup):3.3 V
  • Package Code:TQFP
  • Package Shape:RECTANGULAR
  • Manufacturer:Samsung Semiconductor
  • Part Life Cycle Code:Obsolete
  • Ihs Manufacturer:SAMSUNG SEMICONDUCTOR INC
  • Risk Rank:5.82
  • Part Package Code:QFP
  • JESD-609 Code:e0
  • ECCN Code:EAR99
  • Terminal Finish:Tin/Lead (Sn/Pb)
  • Additional Feature:AUTO/SELF REFRESH
  • HTS Code:8542.32.00.02
  • Subcategory:DRAMs
  • Technology:CMOS
  • Terminal Position:QUAD
  • Terminal Form:GULL WING
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Number of Functions:1
  • Terminal Pitch:0.65 mm
  • Reach Compliance Code:compliant
  • Pin Count:100
  • JESD-30 Code:R-PQFP-G100
  • Qualification Status:Not Qualified
  • Supply Voltage-Max (Vsup):3.465 V
  • Power Supplies:2.5,3.3 V
  • Temperature Grade:COMMERCIAL
  • Supply Voltage-Min (Vsup):3.135 V
  • Number of Ports:1
  • Operating Mode:SYNCHRONOUS
  • Supply Current-Max:0.34 mA
  • Organization:2MX32
  • Output Characteristics:3-STATE
  • Seated Height-Max:1.2 mm
  • Memory Width:32
  • Standby Current-Max:0.003 A
  • Memory Density:67108864 bit
  • I/O Type:COMMON
  • Memory IC Type:DDR DRAM
  • Sequential Burst Length:2,4,8,FP
  • Interleaved Burst Length:2,4,8
  • Access Mode:FOUR BANK PAGE BURST
  • Self Refresh:YES
  • Width:14 mm
  • Length:20 mm

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