Изображение служит лишь для справки
SKB02N120ATMA1
-
Infineon Technologies
-
Транзисторы - IGBT - Одинарные
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(2+Tab) TO-263
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：16 Weeks
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material：SILICON
- Number of Elements：1
- Test Conditions：800V, 2A, 91 Ω, 15V
- Collector-Emitter Breakdown Voltage：1.2kV
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2007
- JESD-609 Code：e3
- Pbfree Code：no
- Part Status：Last Time Buy
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Max Power Dissipation：62W
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：not_compliant
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Pin Count：3
- JESD-30 Code：R-PSSO-G2
- Qualification Status：Not Qualified
- Element Configuration：Single
- Case Connection：COLLECTOR
- Input Type：Standard
- Power - Max：62W
- Transistor Application：POWER CONTROL
- Halogen Free：Halogen Free
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：1.2kV
- Max Collector Current：6.2A
- Reverse Recovery Time：50 ns
- Voltage - Collector Emitter Breakdown (Max)：1200V
- Turn On Time：40 ns
- Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 2A
- Turn Off Time-Nom (toff)：375 ns
- IGBT Type：NPT
- Gate Charge：11nC
- Current - Collector Pulsed (Icm)：9.6A
- Td (on/off) @ 25°C：23ns/260ns
- Switching Energy：220μJ
- RoHS Status：ROHS3 Compliant
- Lead Free：Contains Lead
Со склада 0
Итого $0.00000
Центр поддержки
услуга покупки
пункты договора
Корпорация Whisyee
Контакты