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FGA60N65SMD
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ON Semiconductor
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Транзисторы - IGBT - Одинарные
- TO-3P-3, SC-65-3
- In a Tube of 30, ON Semiconductor FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN
Date Sheet
Lagernummer 393
- 1+： $3.89158
- 10+： $3.67130
- 100+： $3.46350
- 500+： $3.26745
- 1000+： $3.08250
Zwischensummenbetrag $3.89158
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time：7 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Number of Pins：3
- Weight：6.401g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：650V
- Number of Elements：1
- Test Conditions：400V, 60A, 3 Ω, 15V
- Turn Off Delay Time：104 ns
- Operating Temperature：-55°C~175°C TJ
- Packaging：Tube
- Published：2008
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Additional Feature：LOW CONDUCTION LOSS
- HTS Code：8541.29.00.95
- Max Power Dissipation：600W
- Rise Time-Max：70ns
- Element Configuration：Single
- Input Type：Standard
- Turn On Delay Time：18 ns
- Power - Max：600W
- Transistor Application：POWER CONTROL
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：650V
- Max Collector Current：120A
- Reverse Recovery Time：47 ns
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 60A
- IGBT Type：Field Stop
- Gate Charge：189nC
- Current - Collector Pulsed (Icm)：180A
- Td (on/off) @ 25°C：18ns/104ns
- Switching Energy：1.54mJ (on), 450μJ (off)
- Gate-Emitter Voltage-Max：20V
- Gate-Emitter Thr Voltage-Max：6V
- Fall Time-Max (tf)：68ns
- Height：20.1mm
- Length：15.8mm
- Width：5mm
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 393
- 1+： $3.89158
- 10+： $3.67130
- 100+： $3.46350
- 500+： $3.26745
- 1000+： $3.08250
Итого $3.89158
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