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STGW35HF60W

Lagernummer 0

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы
  • Factory Lead Time:8 Weeks
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Weight:6.500007g
  • Transistor Element Material:SILICON
  • Collector-Emitter Breakdown Voltage:600V
  • Number of Elements:1
  • Test Conditions:400V, 20A, 10 Ω, 15V
  • Turn Off Delay Time:175 ns
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tube
  • JESD-609 Code:e3
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Terminal Finish:Tin (Sn)
  • Additional Feature:LOW CONDUCTION LOSS
  • Max Power Dissipation:200W
  • Base Part Number:STGW35
  • Pin Count:3
  • JESD-30 Code:R-PSFM-T3
  • Element Configuration:Single
  • Input Type:Standard
  • Turn On Delay Time:30 ns
  • Power - Max:200W
  • Transistor Application:POWER CONTROL
  • Polarity/Channel Type:N-CHANNEL
  • Collector Emitter Voltage (VCEO):600V
  • Max Collector Current:60A
  • Turn On Time:45 ns
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 20A
  • Turn Off Time-Nom (toff):295 ns
  • Gate Charge:140nC
  • Current - Collector Pulsed (Icm):150A
  • Td (on/off) @ 25°C:30ns/175ns
  • Switching Energy:290μJ (on), 185μJ (off)
  • Gate-Emitter Voltage-Max:20V
  • Gate-Emitter Thr Voltage-Max:5.75V
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

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