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STGY40NC60VD
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STMicroelectronics
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Транзисторы - IGBT - Одинарные
- TO-247-3
- STMICROELECTRONICS STGY40NC60VD IGBT Single Transistor, 80 A, 2.5 V, 260 W, 600 V, MAX-247, 3 Pins
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time：8 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Number of Pins：3
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：600V
- Number of Elements：1
- Test Conditions：390V, 40A, 3.3 Ω, 15V
- Turn Off Delay Time：170 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：PowerMESH™
- JESD-609 Code：e3
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Voltage - Rated DC：600V
- Max Power Dissipation：260W
- Current Rating：50A
- Base Part Number：STGY40
- Pin Count：3
- Element Configuration：Single
- Power Dissipation：260W
- Input Type：Standard
- Turn On Delay Time：43 ns
- Transistor Application：POWER CONTROL
- Rise Time：19ns
- Drain to Source Voltage (Vdss)：600V
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：600V
- Max Collector Current：80A
- Reverse Recovery Time：44ns
- Continuous Drain Current (ID)：50A
- Turn On Time：61 ns
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 40A
- Turn Off Time-Nom (toff)：247 ns
- Gate Charge：214nC
- Td (on/off) @ 25°C：43ns/140ns
- Switching Energy：330μJ (on), 720μJ (off)
- Gate-Emitter Voltage-Max：20V
- Gate-Emitter Thr Voltage-Max：5.75V
- Height：20.3mm
- Length：15.9mm
- Width：5.3mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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