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HGTG30N60B3D
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ON Semiconductor
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Транзисторы - IGBT - Одинарные
- TO-247-3
- IGBT 600V 60A 208W TO247
Date Sheet
Lagernummer 8
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE, NOT REC (Last Updated: 2 days ago)
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Number of Pins：3
- Weight：6.39g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：600V
- Number of Elements：1
- Test Conditions：480V, 30A, 3 Ω, 15V
- Turn Off Delay Time：137 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Published：2011
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Not For New Designs
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Additional Feature：LOW CONDUCTION LOSS
- HTS Code：8541.29.00.95
- Voltage - Rated DC：600V
- Max Power Dissipation：208W
- Current Rating：60A
- Base Part Number：HGTG30N60
- Element Configuration：Single
- Power Dissipation：208W
- Input Type：Standard
- Turn On Delay Time：36 ns
- Transistor Application：POWER CONTROL
- Rise Time：25ns
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：600V
- Max Collector Current：60A
- Reverse Recovery Time：55 ns
- Turn On Time：56 ns
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Turn Off Time-Nom (toff)：365 ns
- Gate Charge：170nC
- Current - Collector Pulsed (Icm)：220A
- Td (on/off) @ 25°C：36ns/137ns
- Switching Energy：550μJ (on), 680μJ (off)
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 8
Итого $0.00000
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