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STGP10NC60KD
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STMicroelectronics
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Транзисторы - IGBT - Одинарные
- TO-220-3
- IGBT 600V 20A 65W TO220
Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time：8 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Number of Pins：3
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：600V
- Number of Elements：1
- Test Conditions：390V, 5A, 10 Ω, 15V
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：PowerMESH™
- JESD-609 Code：e3
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn)
- Voltage - Rated DC：600V
- Max Power Dissipation：65W
- Current Rating：20A
- Base Part Number：STGP10
- Pin Count：3
- Element Configuration：Single
- Power Dissipation：25W
- Case Connection：ISOLATED
- Input Type：Standard
- Transistor Application：POWER CONTROL
- Rise Time：6ns
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：600V
- Max Collector Current：20A
- Reverse Recovery Time：22 ns
- JEDEC-95 Code：TO-220AB
- Turn On Time：23 ns
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
- Turn Off Time-Nom (toff)：242 ns
- Gate Charge：19nC
- Current - Collector Pulsed (Icm)：30A
- Td (on/off) @ 25°C：17ns/72ns
- Switching Energy：55μJ (on), 85μJ (off)
- Gate-Emitter Voltage-Max：20V
- Gate-Emitter Thr Voltage-Max：7V
- Height：9.15mm
- Length：10.4mm
- Width：4.6mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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