Изображение служит лишь для справки

APT65GP60B2G

Lagernummer 0

Zwischensummenbetrag $0.00000

Спецификация Часто задаваемые вопросы
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3 Variant
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Collector-Emitter Breakdown Voltage:600V
  • Number of Elements:1
  • Test Conditions:400V, 65A, 5 Ω, 15V
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tube
  • Series:POWER MOS 7®
  • Published:1999
  • JESD-609 Code:e1
  • Pbfree Code:yes
  • Part Status:Not For New Designs
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • Terminal Finish:TIN SILVER COPPER
  • Additional Feature:LOW CONDUCTION LOSS
  • Voltage - Rated DC:600V
  • Max Power Dissipation:833W
  • Current Rating:100A
  • Pin Count:3
  • Element Configuration:Single
  • Case Connection:COLLECTOR
  • Input Type:Standard
  • Transistor Application:POWER CONTROL
  • Polarity/Channel Type:N-CHANNEL
  • Collector Emitter Voltage (VCEO):600V
  • Max Collector Current:100A
  • Turn On Time:84 ns
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 65A
  • Turn Off Time-Nom (toff):219 ns
  • IGBT Type:PT
  • Gate Charge:210nC
  • Current - Collector Pulsed (Icm):250A
  • Td (on/off) @ 25°C:30ns/91ns
  • Switching Energy:605μJ (on), 896μJ (off)
  • Radiation Hardening:No
  • RoHS Status:RoHS Compliant
  • Lead Free:Lead Free

Со склада 0

Итого $0.00000