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APT65GP60B2G
- Microsemi Corporation
- Транзисторы - IGBT - Одинарные
- TO-247-3 Variant
- Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) T-MAX
- Date Sheet
Lagernummer 0
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-247-3 Variant
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:600V
- Number of Elements:1
- Test Conditions:400V, 65A, 5 Ω, 15V
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Series:POWER MOS 7®
- Published:1999
- JESD-609 Code:e1
- Pbfree Code:yes
- Part Status:Not For New Designs
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Terminal Finish:TIN SILVER COPPER
- Additional Feature:LOW CONDUCTION LOSS
- Voltage - Rated DC:600V
- Max Power Dissipation:833W
- Current Rating:100A
- Pin Count:3
- Element Configuration:Single
- Case Connection:COLLECTOR
- Input Type:Standard
- Transistor Application:POWER CONTROL
- Polarity/Channel Type:N-CHANNEL
- Collector Emitter Voltage (VCEO):600V
- Max Collector Current:100A
- Turn On Time:84 ns
- Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 65A
- Turn Off Time-Nom (toff):219 ns
- IGBT Type:PT
- Gate Charge:210nC
- Current - Collector Pulsed (Icm):250A
- Td (on/off) @ 25°C:30ns/91ns
- Switching Energy:605μJ (on), 896μJ (off)
- Radiation Hardening:No
- RoHS Status:RoHS Compliant
- Lead Free:Lead Free
Со склада 0
Итого $0.00000