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IRG4PH50SPBF
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Infineon Technologies
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Транзисторы - IGBT - Одинарные
- TO-247-3
- IGBT 1200V 57A 200W TO247AC
Date Sheet
Lagernummer 10160
Zwischensummenbetrag $0.00000
Спецификация Часто задаваемые вопросы
- Factory Lead Time：14 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Number of Pins：3
- Weight：38.000013g
- Transistor Element Material：SILICON
- Collector-Emitter Breakdown Voltage：1.2kV
- Number of Elements：1
- Test Conditions：960V, 33A, 5 Ω, 15V
- Turn Off Delay Time：845 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Bulk
- Published：2004
- Part Status：Last Time Buy
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- Termination：Through Hole
- ECCN Code：EAR99
- Voltage - Rated DC：1.2kV
- Max Power Dissipation：200W
- Current Rating：57A
- Element Configuration：Single
- Power Dissipation：200W
- Case Connection：COLLECTOR
- Input Type：Standard
- Turn On Delay Time：32 ns
- Transistor Application：POWER CONTROL
- Rise Time：29ns
- Polarity/Channel Type：N-CHANNEL
- Collector Emitter Voltage (VCEO)：1.2kV
- Max Collector Current：57A
- Continuous Drain Current (ID)：57A
- JEDEC-95 Code：TO-247AC
- Gate to Source Voltage (Vgs)：30V
- Voltage - Collector Emitter Breakdown (Max)：1200V
- Input Capacitance：3.6nF
- Turn On Time：62 ns
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 33A
- Max Junction Temperature (Tj)：150°C
- Continuous Collector Current：57A
- Turn Off Time-Nom (toff)：2170 ns
- Gate Charge：167nC
- Current - Collector Pulsed (Icm)：114A
- Td (on/off) @ 25°C：32ns/845ns
- Switching Energy：1.8mJ (on), 19.6mJ (off)
- Height：24.99mm
- Length：15.875mm
- Width：5.3mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
Со склада 10160
Итого $0.00000
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